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Luo, Jun-Wei; Olson, J. M.; Kurtz, Sarah; Arent, D. J.; Raǐkh, M. É.; Tsiper, E. V.

doi:10.1103/physrevb.51.7603

Cited by 26 publications

(12 citation statements)

References 33 publications

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“…15 The structures below 2.0 eV in the InGaP spectrum arise from bulk and interface anisotropies plus Fabry-Perot interferences, since the InGaP layer is transparent below its E 0 band gap at 1.86 eV. 20 The similarity between the RAS spectra already gives an indication that the atomic surface structure for the three materials might be similar. In Fig.…”

Section: Comparison To Inp"001… and Gap"001…mentioning

confidence: 95%

Atomic structure and composition of the (2×4) reconstruction of InGaP(001)

Vogt¹,

Lüdge²,

Zorn³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this study scanning tunneling microscopy (STM), soft x-ray photoemission spectroscopy (SXPS), and reflectance anisotropy spectroscopy were used to investigate the microscopic structure of (2×4) reconstructed InGaP(001) surfaces. The samples were grown lattice matched on GaAs(001) by metalorganic vapor phase epitaxy. Immediately after growth the surfaces were passivated by a thick amorphous cap consisting of a P/As double layer and then transferred to ultrahigh vacuum (UHV) analysis chambers either equipped with STM or connected to the BESSY synchrotron radiation source for photoemission experiments. Thermal desorption of the As/P capping layer at 460 °C under UHV conditions leads reproducibly to the formation of a III-rich (2×4) reconstruction, the more P-rich (2×1) could not be obtained. The low energy electron diffraction image shows a clear (2×4) pattern with sharp integer-order and fractional-order spots. STM images show rows along the [1̄10] direction with fourfold separation in the [110] direction, similar to the (2×4) reconstruction of InP(001). SXPS spectra of the In 4d/Ga 3d and P 2p core levels demonstrate that this surface may consist of a mixed-dimer structure analogous to the one found on InP(001) and GaP(001) (2×4). Further annealing of the sample to higher temperatures degrades the surface without producing another reconstruction. The (2×4) reconstruction thus represents the most III-rich (least P-rich) stable surface for InGaP(001).

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Section: Comparison To Inp"001… and Gap"001…mentioning

confidence: 95%

Atomic structure and composition of the (2×4) reconstruction of InGaP(001)

Vogt¹,

Lüdge²,

Zorn³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…RAS studies of the CuPt B -type ordering in general are complicated due to the difficulty of separating the surface and the bulk contributions to the optical response. Therefore, former RAS investigations [17][18][19][20] could not establish a clear correlation between the surface structure and the bulk ordering. In order to circumvent these problems due to the superposition of bulk and surface anisotropy contributions in our approach, we first separated the bulk dielectric anisotropy that is caused by a certain bulk ordering parameter .…”

Section: Introductionmentioning

confidence: 94%

Correlation of InGaP(001) surface structure during growth and bulk ordering

et al. 1999

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CuPt B -type ordering of InGaP grown lattice matched to GaAs was investigated by in situ reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. The experiments have been performed during InGaP growth both via metal-organic vapor phase epitaxy and chemical beam epitaxy. Additionally, total energy calculations ͑TE͒ have been performed for differently ordered InGaP slabs. From both experiment and TE calculations we conclude that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2ϫ1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2ϫ4)-like surface dimer configuration. P dimers in the (2ϫ1) symmetry at the growth surface trigger the bulk ordering driven by an energy gain of 0.26 eV per surface atom according to our TE calculations. ͓S0163-1829͑99͒05635-0͔

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“…Typically, the type of surface reconstruction determines the characteristic features of the corresponding RA spectra, but a number of different parameters such as atomic order, purity, and sample temperature are decisive for the position and intensity of the observed peaks [9,16,17,24]. Beyond that, major signal contributions can arise from bulk-related anisotropies (such as ordering [25]) or from mesoscopic 3D-structures on the surface such as facets, steps, terraces or islands [26,27]. Various origins of the RAS signal have already been modeled by empirical [26] and semiempirical [28] methods, some even by ab initio computational techniques [18], but still experimental RA spectra can generally not be predicted reliably by theoretical calculations.…”

Section: Introductionmentioning

confidence: 97%