Optical and Transport Properties of Ni-MoS2

Ko, Tsung-Shine; Huang, Cheng Ching; Lin, Der Yuh

doi:10.3390/app6080227

Cited by 13 publications

(7 citation statements)

References 29 publications

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“…For MoS 2 (MoSe 2 ), we obtained an E 0 of 1.96 eV (1.67 eV), an electron-phonon coupling constant S of 2.37 (2.46), and an average phonon energy ℏ ω of 25 meV (17 meV). These values are in good agreement with mechanical exfoliated and CVD literature. − The excitonic linewidth of MoX 2 includes the intrinsic line width Δ 0 , and a contribution from acousticΔ AC and LO Δ LO phonon coupling that increases with temperature, yielding the following temperature dependence: …”

Section: Resultssupporting

confidence: 83%

Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Pippia

Rousaki

Barbone

et al. 2022

ACS Appl. Nano Mater.

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Transition-metal dichalcogenide (TMD) nanosheets have become an intensively investigated topic in the field of 2D nanomaterials, especially due to the direct semiconductor nature, and the broken inversion symmetry in the odd-layer number, of some of their family members. These properties make TMDs attractive for different technological applications such as photovoltaics, optoelectronics, valleytronics, and hydrogen evolution reactions. Among them, MoX 2 (X = S and Se) are turned to direct gap when their thickness is thinned down to monolayer, and thus, efforts toward obtaining large-scale monolayer TMDs are crucial for technological applications. Colloidal synthesis of TMDs has been developed in recent years, as it provides a cost-efficient and scalable way to produce few-layer TMDs having homogeneous size and thickness, yet obtaining a monolayer has proven challenging. Here, we present a method for the colloidal synthesis of mono-and few-layer MoX 2 (X = S and Se) using elemental chalcogenide and metal chloride as precursors. Using a synthesis with slow injection of the MoCl 5 precursor under a nitrogen atmosphere, and optimizing the synthesis parameters with a design of experiments approach, we obtained a MoX 2 sample with the semiconducting (1H) phase and optical band gaps of 1.96 eV for 1H−MoS 2 and 1.67 eV for 1H−MoSe 2 , respectively, consistent with a large monolayer yield in the ensemble. Both display photoluminescence at cryogenic and room temperature, paving the way for optical spectroscopy studies and photonic applications of colloidal TMD nanosheets.

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Section: Resultssupporting

confidence: 83%

Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Pippia

Rousaki

Barbone

et al. 2022

ACS Appl. Nano Mater.

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“…Alternatively, several p-type doping approaches for MoS 2 have been established. Examples initiated doping by incorporating substitutional niobium, Nb, atoms during chemical vapor deposition (CVD) growth and chemical doping with AuCl 3 [12][13][14]. However, substitutional doping during CVD growth is lacking in area selectivity and the adoption of AuCl 3 would be hampered by the risk of Au contamination.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Zhang

Tseng

2019

Applied Sciences

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Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

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“…In our previous work, we have investigated the effects of Ni dopants on the fundamental material properties of undoped and Ni-doped thin films. 22) To understand whether Ni dopants affect the performance of MoS 2 -based PDs or not, herein we further fabricated MoS 2 PDs utilizing undoped and Ni-doped MoS 2 thin films. Persistent photoconductivity (PPC) was also considered to confirm the Ni effect on rise=fall time, which is related to the operation speed of MoS 2 PDs.…”

Section: Introductionmentioning

confidence: 99%

Observation of persistent photoconductivity in Ni-doped MoS₂

Chen

Lin

et al. 2017

Jpn. J. Appl. Phys.

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In this study, Ni-doped MoS 2 was grown by chemical vapor transportation. Photoconductivity results reveal that Ni-doped MoS 2 has an obvious doping level of 1.2 eV and an electrical conductivity of σ `9.92 ' 10 %7 S cm %1 at room temperature, which is lower than that of undoped MoS 2 (σ `7.913 ' 10 %5 S cm %1 ) owing to the impurity state caused by Ni atoms. Hall effect measurement results indicate that Ni-doped MoS 2 sample is of the n-type and has a higher resistance and a lower mobility than undoped MoS 2 . We further fabricated undoped and Ni-doped MoS 2 photodetectors to understand the operation characteristics of MoS 2 -based photodetectors. Persistent photoconductivity shows that both rise and fall times decreased from 0.33/0.68 to 0.14/0.43 s as Ni atoms were doped in MoS 2 PDs. This work shows that Ni atoms could cause small lattice imperfections to form trap states leading to high resistance, low mobility, small activation energy and short decay time. Therefore, doping Ni atoms in MoS 2 is beneficial for the application of photodetectors.

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Optical and Transport Properties of Ni-MoS2

Cited by 13 publications

References 29 publications

Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Observation of persistent photoconductivity in Ni-doped MoS₂

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Optical and Transport Properties of Ni-MoS2

Cited by 13 publications

References 29 publications

Colloidal Continuous Injection Synthesis of Fluorescent MoX2 (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Colloidal Continuous Injection Synthesis of Fluorescent MoX2 (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Observation of persistent photoconductivity in Ni-doped MoS2

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Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Colloidal Continuous Injection Synthesis of Fluorescent MoX₂ (X = S, Se) Nanosheets as a First Step Toward Photonic Applications

Observation of persistent photoconductivity in Ni-doped MoS₂