Optical and transport properties of Sn-doped ZnMn 2 O 4 prepared by sol–gel method

Synthesis and characterization of a ZnMn2O4nanostructure as a chemical nanosensor: a facile and new approach for colorimetric determination of omeprazole and lansoprazole drugs

“…656 nm which is consistent with the published results. 10 The spinel ZnMn 2 O 4 product (G 6_500 ) direct band gap energy was calculated by plotting [F(R)xhn] 2 versus hn (Fig. 7(b)) where hn is the incident photon energy (eV).…”

“…And the calculated band gap energy value is compatible with the reported ones. 10,14 The estimated band gap energy value indicates the semiconducting properties of the as-fabricated spinel ZnMn 2 O 4 product (G 6_500 ). 2,8…”

“…[5][6][7][8][9] Among these spinel nanostructures, nano-sized zinc manganite (ZnMn 2 O 4 ) has received a considerable attention due to its various applications such as in sensors, electrodes, lithium rechargeable batteries, specic memory devices, thermistors, and catalysis. [10][11][12][13][14] Therefore, many research groups have devoted their efforts to synthesizing spinel ZnMn 2 O 4 nanostructures. In this light, ZnMn 2 O 4 nanostructures with different morphologies and particle sizes have been prepared using various routes such as pyrolysis, solvothermal, electrospinning, hydrothermal, sol-gel, and the solid state method.…”

Synthesis and Photocatalytic Properties of Co-Doped Zn1-xCoxMn2O Hollow Nanospheres

“…In recent years, some researchers have studied transition metal ion-doped ZnMn 2 O 4 nanocrystals to obtain the desired crystal structure and energy band structure by providing extra positive carriers in the host material [20]. The crystal structure and energy band structure of semiconductor materials can be modified to improve their physical properties by controlling the preparation process, changing the type and amount of doped elements [21,22]. In addition, transition metal ion configuration doping can significantly improve the separation rate of photoinduced carriers in semiconductor photocatalysts, inhibit the recombination of photoinduced electron hole pairs, and greatly improve photocatalytic activity [23].…”

“…The crystal structure and energy band structure of semiconductor materials can be modified to improve their physical properties by controlling the preparation process, changing the type and amount of doped elements [21,22]. In addition, transition metal ion configuration doping can significantly improve the separation rate of photoinduced carriers in semiconductor photocatalysts, inhibit the recombination of photoinduced electron hole pairs, and greatly improve photocatalytic activity [23]. Unfortunately, as far as we know, there are few reports about the influence of doping concentration on the photocatalytic performance of the transition metal-ion doped ZnMn2O4 nanostructure.…”