2011
DOI: 10.1155/2011/734574
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Optical and Thermal Properties of In2S3

Abstract: Photothermal deflection spectroscopy (PDS) is carried out in order to investigate thermal and optical properties of Al doped In2S3. The influence of thermal annealing on its gap energy as well as its thermal properties is revealed. In this way, we notice that thermal conductivity is increased and the gap energy is reduced. These features are probably due to the improvement of the crystalline structure of the sample.

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Cited by 10 publications
(4 citation statements)
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“…2 2 12planes. This matches with ICDD card no: 00-025-0390 and thus confirms the tetragonal structure of In2S3 film [28]. The crystallite size was calculated from the most intense peak using Debye Scherrer formula, which is found to be 48.5 nm for TiO2 film and 17.3 nm for In2S3 film respectively.…”
Section: Photocatalytic Testsupporting
confidence: 81%
“…2 2 12planes. This matches with ICDD card no: 00-025-0390 and thus confirms the tetragonal structure of In2S3 film [28]. The crystallite size was calculated from the most intense peak using Debye Scherrer formula, which is found to be 48.5 nm for TiO2 film and 17.3 nm for In2S3 film respectively.…”
Section: Photocatalytic Testsupporting
confidence: 81%
“…The band gap of In 2 S 3 is tunable from 2.1 eV to 2.9 eV, which should be attributed to the variation of the temperature and the oxygen content doped into the In 2 S 3 layer. [35][36][37] Furthermore, the electron affinity of In 2 S 3 will change with the variation of band gap. [38] The relationship between the band gap and electron affinity is shown below.…”
Section: Double Buffer Layermentioning
confidence: 99%
“…Indium sulphide (In 2 S 3 ) has emerged as a promising material for various optoelectronic and photovoltaic applications due to its exceptional properties such as stability, wide optical band gap, large transmittance etc. [1][2][3] In 2 S 3 is a III-VI group compound which exhibits three different crystalline phases of a, b and c. 4 The a phase exists in a cubic structure and it is formed between temperatures of 420°C and 754°C, while the c phase is trigonal, which appears at temperature above 754°C. The b phase exists in a tetragonal structure and it is stable up to 420°C.…”
Section: Introductionmentioning
confidence: 99%
“…12,13 Due to these remarkable properties, CNTs have potential applications in areas such as flat displays, gas discharge tubes in telecommunication networks, absorption and screening of electromagnetic waves, energy conversion, fillers or coatings, nanoprobes, supercapacitors, nanoelectronics, flexible electronics, gas sensors, chemical sensors, electrocatalysts, environmental remediation, photocatalysts and photodetectors. [12][13][14][15] In 2 S 3 thin films can be deposited on a glass substrate by various methods such as atomic layer deposition, 16 spray pyrolysis, 2,5,7 successive ionic layer adsorption and reaction, 6,17 sputtering, 18 spin coating 19 and chemical bath deposition (CBD). 1,3,20,21 Here, In 2 S 3 thin films were coated on glass substrate by CBD, in which thin films are deposited on a substrate from the solution.…”
Section: Introductionmentioning
confidence: 99%