Optical and Thermal Properties of Si–O–C Films Grown by Organic Catalytic Chemical Vapor Deposition Using Organic Silicon

Abstract

Optical, thermal and mechanical properties of Si-O-C ternary alloy films grown by organic catalytic chemical vapor deposition (CVD) were studied in comparison with those of Si-O films grown by electron-beam evaporation and AlN grown by electron cyclotron resonance sputtering. Si-O-C with Si: 36 at.%, O: 46 at.%, and C: 18 at.%, grown using TEOS, shows a relatively high refractive index of around 1.9 and a small extinction coefficient of less than 0.01 at wavelengths between 500 nm and 1000 nm. The value of the extinction coefficient is roughly five times smaller than that of SiO films grown by electron-beam evaporation. The thermal conductivity of 0.64 W/mÁK and the stress of the film are comparable with those of SiO. The results indicate that Si-O-C grown by organic catalytic CVD using TEOS is a promising material for optical applications such as laser diodes and semiconductor optical amplifiers.Growth period = 60 min. Thickness: Si-C = 0.47 mm, Si-O-C: DMDMOS = 1.25 mm, Si-O-C: TEOS = 2.24 mm Jpn.