2006
DOI: 10.1016/j.tsf.2005.07.239
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Low-temperature growth of Si-based organic–inorganic hybrid materials, Si–O–C and Si–N–C, by organic Cat-CVD

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Cited by 25 publications
(9 citation statements)
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“…Specifically, 100.9 and 101.6 eV (Si‐O 2p 3/2 and Si‐O 2p 1/2 respectively) indicate covalent bonding of Si with a long‐chain aldehyde (Effenberger et al ., ). The peak positions of XPS shift to the higher‐energy from 100.1 to 101.3 eV, depending on the average coordination number of O atoms with Si atoms in Si–O–C bonds by organic ligands (Nakayama & Hata, ). At present we have no direct evidence for the nature of the interaction between Si and the exact wall macromolecules (either in the form of polysaccharides or glycoproteins) identified at the molecular level, and thus it is difficult to directly relate the XPS signal arising from the Si‐O‐C or O‐Si‐C linkage to an exact organic ligand in the walls.…”
Section: Resultsmentioning
confidence: 99%
“…Specifically, 100.9 and 101.6 eV (Si‐O 2p 3/2 and Si‐O 2p 1/2 respectively) indicate covalent bonding of Si with a long‐chain aldehyde (Effenberger et al ., ). The peak positions of XPS shift to the higher‐energy from 100.1 to 101.3 eV, depending on the average coordination number of O atoms with Si atoms in Si–O–C bonds by organic ligands (Nakayama & Hata, ). At present we have no direct evidence for the nature of the interaction between Si and the exact wall macromolecules (either in the form of polysaccharides or glycoproteins) identified at the molecular level, and thus it is difficult to directly relate the XPS signal arising from the Si‐O‐C or O‐Si‐C linkage to an exact organic ligand in the walls.…”
Section: Resultsmentioning
confidence: 99%
“…Specifically, 100.9 and 101.6 eV (Si–O 2p 3/2 and Si–O 2p 1/2 , respectively) indicate covalent bonding of Si with a long‐chain aldehyde (Effenberger et al ., ). The peak positions of XPS shift to the higher energy depending on the average coordination number of O atoms with Si atoms in Si–O–C bonds by organic ligands (Nakayama & Hata, ; He et al ., ). It is relatively difficult to detect this unknown HC‐bound form of Si using FT‐IR spectroscopy as a result of its trace amounts which are below the detection limit of FT‐IR.…”
Section: Discussionmentioning
confidence: 99%
“…The kinds of films prepared by this technique are expanding. Amorphous silicon (a-Si) [1,2], amorphous silicon germanium (a-SiGe) [3], amorphous silicon carbide (a-SiC) [4,5], amorphous carbon [6], silicon nitride (SiN x ) [7,8], silicon dioxide (SiO 2 ) [9], aluminum oxide (Al 2 O 3 ) [10], gallium nitride (GaN) [11][12][13][14], aluminum nitride (AlN) [15], poly-crystalline silicon (poly-Si) [16], carbon-doped silicon oxide (Si-O-C) [17], carbon-doped silicon nitride (Si-N-C) [17], diamond [18,19], carbon nanotube [20], carbon nanowall [21,22], carbon nanoparticles [20], poly-tetra-fluoro-ethylene (PTFE) and poly-glycidyl-methacrylate (PGMA) [23,24] can be all prepared by this technique.…”
Section: Introductionmentioning
confidence: 99%