“…The kinds of films prepared by this technique are expanding. Amorphous silicon (a-Si) [1,2], amorphous silicon germanium (a-SiGe) [3], amorphous silicon carbide (a-SiC) [4,5], amorphous carbon [6], silicon nitride (SiN x ) [7,8], silicon dioxide (SiO 2 ) [9], aluminum oxide (Al 2 O 3 ) [10], gallium nitride (GaN) [11][12][13][14], aluminum nitride (AlN) [15], poly-crystalline silicon (poly-Si) [16], carbon-doped silicon oxide (Si-O-C) [17], carbon-doped silicon nitride (Si-N-C) [17], diamond [18,19], carbon nanotube [20], carbon nanowall [21,22], carbon nanoparticles [20], poly-tetra-fluoro-ethylene (PTFE) and poly-glycidyl-methacrylate (PGMA) [23,24] can be all prepared by this technique.…”