Optical and surface properties of CdSe thin films prepared by sol-gel spin coating method

Hassen, M.; Riahi, R.; Laatar, Fakher; Ezzaouia, Hatem

doi:10.1016/j.surfin.2019.100408

Cited by 21 publications

(4 citation statements)

References 53 publications

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“…The behaviors n via wavelength of CdSe: 2 and 4 % silver films is shown in Figure ( 8), We can see from this figure that the value of (n) increases with increasing silver concentration due to the increases in compactness of films after doping simultaneously with the increasing of the crystallite size [43,44].…”

Section: Optical Properties Studymentioning

confidence: 93%

Effect of silver-doping on the structural, topography and optical CdSe thin films

Jasim¹,

Hadi²,

Chiad³

et al. 2023

JOR

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Using thermal evaporation, thin films of silver-doped CdSe were synthesized on glass bases. A hexagonal structure with a preference orientation along (100) plane according to the X-ray diffraction pattern. The surface topography was determined using Atomic Force Microscopy (AFM). AFM detects spherical nature nanoparticles and roughness rate of the CdSe thin film decreases and the root mean square decreases with (2 and 4) % doping in silver. As the doping content increase, the optical energy bandgap decrease from 1.85 eV to 1.75 eV. Optical analysis indicates that Ag doping in CdSe results in a redshift in band edge.

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Section: Optical Properties Studymentioning

confidence: 93%

Effect of silver-doping on the structural, topography and optical CdSe thin films

Jasim¹,

Hadi²,

Chiad³

et al. 2023

JOR

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“…It is being widely used as core material in different optoelectronic devices such as power efficient solar cells [5], sensors [6], thin film transistors [7], light emitting diodes [8] etc. Nanocrystalline thin films of CdSe have been prepared using different methods [9][10][11][12][13][14][15][16], out of which CBD technique is mainly used because of its simplicity, effectiveness and variability [17][18][19]. Although wide range of works on the synthesis and characterization of nanocrystalline thin films of CdSe have already been reported [9][10][11][12][13][14][15][16][17][18][19], but only few works on the photoelectronic properties specifically based on the wavelength and the intensity of incident illumination have been found in the available literatures [20,21].…”

Section: Introductionmentioning

confidence: 99%

Effect of Intensity and Wavelength of Illumination on the Photoelectronic Properties of Nanocrystalline CdSe Thin Films

Sarmh¹,

Borah²

2022

Trends Sci

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Photoelectronic properties of nanocrystalline CdSethin films prepared by chemical bath deposition (CBD) technique at room temperature are studied taking its molar concentration as a function. Structural analysis of the deposited thin films shows that change of molarity brings a variation in the crystalline sizes of the thin films. Such thin films show suitable photoelectronic properties for the construction of different optoelectronic devices. The photocurrents are observed to be significantly defect controlled in the visible range of wavelengths. The transport mechanism for the thin films is generally a doubly activated process and the photocurrent decay characteristics curves are found to exhibit 2 different decay times which actually correspond to 2 distinct trap levels. HIGHLIGHTS The photoelectronic properties of nanocrystalline CdSe thin films deposited by CBD method are studied From the XRD of the films diffraction peaks may be indexed to diffraction basically from the (111) plane of zincblende structure The optical band gap may be varied with the molarity of the solution used for deposition Photoelectronic properties are dependent of the intensity of different monochromatic illuminations Photocurrents for the films are basically controlled by the grain boundary defects Growth and decay of photocurrent are effectively governed by different kind of traps GRAPHICAL ABSTRACT

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“…CdSe is a direct band gapsemi-conductor with interesting spintronics, electronic and optoelectronic features [1 Furthermore, low-temperature techniques (chemical spray or evaporation sputtering) can be used for preparing an n-CdSe/p-Si structure, limiting lifespan degradation and making it appropriate as an inexpensive space solar cells. In the hetero-junction solar cells, low resistivity of CdSe films are necessary in order to reduce the cell series resistance, restrict bending in narrow band gap materials, and reduce conduction band-Fermi level energy gap [2,3]. In addition, the semiconducting material CdSe has been utilized in heterojunction fabrications due to its photosensitive and nanocrystalline features.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of CdSe/Si Nanostructures Thin Films Heterojunction by DC Sputtering for Solar Cell Applications

Khudiar¹

2022

basjs

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CdSe nanocrystalin thin films were deposited onto silicon wafer using DC plasma sputtering method. Quantification of the crystalline size of CdSe thin films has been achieved by X-ray diffraction (XRD) technique. Otical properties of prepared CdSe thin films including absorption coefficient and optical band gap, have been analyzed and evaluated in the wavelength range of 250-850 nm. In addition, the current-voltage characteristics of a CdSe/Si hetero-junction have been examined, and the results show that lighting causes an increase in photo-current. The open circuit voltage was 2.0 V and the short circuit current was 0.18 mA. The abbreviation open circuit current is Voc.

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Optical and surface properties of CdSe thin films prepared by sol-gel spin coating method

Cited by 21 publications

References 53 publications

Effect of silver-doping on the structural, topography and optical CdSe thin films

Effect of silver-doping on the structural, topography and optical CdSe thin films

Effect of Intensity and Wavelength of Illumination on the Photoelectronic Properties of Nanocrystalline CdSe Thin Films

Fabrication of CdSe/Si Nanostructures Thin Films Heterojunction by DC Sputtering for Solar Cell Applications

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