Optical and structural properties of m ‐plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates

Abstract

Solely on the basis of Raman spectra and quantum chemical calculations, the previously unknown cluster anion Si94− (structure shown) was characterized and its structure determined. The anion is formed as a component of solid phases by the thermal decomposition of alkali metal monosilicides.

Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

“…In this respect, the polishing process was performed by a combination of mechanical polishing and chemical mechanical polishing (CMP). We used five different polishing stages labeled by numbers 0-4, from rough (0), through optical mechanically polished ones (1,2) to the final, most precise, CMP polished surface (3,4). The polishing stages can be distinguished by different kinds and sizes of abrasive grain, different mechanical pads, and different chemicals in final CMP processes.…”

“…Recent progress in the growth of truly bulk GaN crystals by the ammonothermal method [1] allows mass production of GaN substrates with various crystallographic orientations, including nonpolar [2,3] and semi-polar substrates [4]. This indicates that nowadays the growth of GaN-based devices can be developed for various crystallographic orientations but it is still unclear if the growth conditions, which are optimal for polar substrates, will be suitable for other crystallographic orientations.…”

Defects in Single Crystalline Ammonothermal Gallium Nitride

“…Reproduced with permission. [124] Copyright 2010, Wiley-VCH. c) Photograph of a large m-plane oriented crystal boule grown using the acidic ammonothermal method in a lined Ni-based alloy autoclave.…”

Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies

“…Recent progress in the growth of truly bulk GaN crystals by the ammonothermal method [1,2] allows the application of GaN substrates with various crystallographic orientations, including polar [1,2], non-polar [3,4], and semi-polar orientation [5]. It indicates that nowadays the growth of GaN-based devices can be developed for various crystallographic orientations, but it is still unclear which orientations are going to be the most suitable for certain devices such as laser diodes, light emitting diodes, or high electron mobility transistors.…”