Optical and Structural Properties of Silicon Nanocrystals Embedded in SiO<sub><i>x</i></sub> Matrix Obtained by HWCVD

Coyopol, A.; Garcı́a-Salgado, G.; Díaz-Becerril, T.; Juárez, H.; Rosendo, E.; López, Rosalva Loreto; Pacio, M.; Luna-López, J. A.; Carrillo-López, J.

doi:10.1155/2012/368268

Cited by 10 publications

(6 citation statements)

References 35 publications

(38 reference statements)

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“…Figure 6b, shows the effect of annealing between 900 and 1100°C on SRO monolayer of 5.2 at.% of Si-excess, where the disappearance of band located around 880 cm −1 is observed. Likewise, a phase separation and Si-NCs formation in SRO monolayers is corroborated by the shift observed in the Si-O-Si stretching band position (1047-1080 cm −1 ) after thermal annealing [25,27]. It can be seen that for an annealing above about 1000°C, stretching peak appears at 1080 cm −1 .…”

Section: Sro Monolayersupporting

confidence: 60%

“…An additional IR band of low intensity is observed around 880 cm −1 . Such vibrational mode disappears when samples are thermally annealed, indicating a rearrangement of the SiO x network due to a diffusion of Si atoms, which promotes Si-SiO x phase separation and the formation of Si-NCs in SRO layers [25][26][27]. Figure 6b, shows the effect of annealing between 900 and 1100°C on SRO monolayer of 5.2 at.% of Si-excess, where the disappearance of band located around 880 cm −1 is observed.…”

Section: Sro Monolayermentioning

confidence: 95%

“…In this way, it is likely that a re-diffusion of Si atoms between SRO-SiO x interfaces as well as within SRO layers after thermal treatment is performed. Such annealing, promotes crystallization of Si clusters and Si-NCs formation between SRO-SiO x interfaces [25][26][27]. The Si-excess or Si clusters within of multiple SRO layers were detected from Si2p-XPS analysis.…”

Section: Sro/sio 2 Mlsmentioning

confidence: 99%

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Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO 2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.

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Section: Sro Monolayersupporting

confidence: 60%

Section: Sro Monolayermentioning

confidence: 95%

Section: Sro/sio 2 Mlsmentioning

confidence: 99%

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Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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“…Silicon rich layers [18] and/or SiO 2 /Ge multilayers [19], after annealing at appropriate temperatures, produce a significant PL signal which indicates that structural changes, that is, nanoparticles or voids, developed in the films. In order to check the effect of voids creation within a SiO 2 matrix the PL was measured from SiO 2 layers with voids and compared with the PL from as-deposited SiO 2 /Ge multilayers; see Figure 9.…”

Section: Resultsmentioning

confidence: 99%

Self-Ordered Voids Formation in SiO₂ Matrix by Ge Outdiffusion

Pivac

Dubček

Dasović

et al. 2018

Journal of Nanomaterials

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The annealing behavior of very thin SiO 2 /Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800 ∘ C) in inert atmosphere, Ge is completely outdiffused from the SiO 2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO 2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization (in horizontal direction). The formed films produce intensive photoluminescence (PL) with a peak at 500 nm. The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO 2 defected interface layers.

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“…The insets display Si (311) and Si (111). Average size is displayed in Figure 5 b and corresponds to 5.0 nm [ 43 ].…”

Section: Resultsmentioning

confidence: 99%

Evaluation of optical and electronic properties of silicon nano-agglomerates embedded in SRO: applying density functional theory

et al. 2014

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In systems in atomic scale and nanoscale such as clusters or agglomerates constituted by particles from a few to less than 100 atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nanostructures display optical and electronic properties significantly different to those found in corresponding bulk materials. Silicon agglomerates embedded in silicon rich oxide (SRO) films have optical properties, which have been reported to be directly dependent on silicon nanocrystal size. Furthermore, the room temperature photoluminescence (PL) of SRO has repeatedly generated a huge interest due to its possible applications in optoelectronic devices. However, a plausible emission mechanism has not been widely accepted in the scientific community. In this work, we present a short review about the experimental results on silicon nanoclusters in SRO considering different techniques of growth. We focus mainly on their size, Raman spectra, and photoluminescence spectra. With this as background, we employed the density functional theory with a functional B3LYP and a basis set 6-31G* to calculate the optical and electronic properties of clusters of silicon (constituted by 15 to 20 silicon atoms). With the theoretical calculation of the structural and optical properties of silicon clusters, it is possible to evaluate the contribution of silicon agglomerates in the luminescent emission mechanism, experimentally found in thin SRO films.

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Optical and Structural Properties of Silicon Nanocrystals Embedded in SiO_x Matrix Obtained by HWCVD

Cited by 10 publications

References 35 publications

Synthesis and Luminescent Properties of Silicon Nanocrystals

Synthesis and Luminescent Properties of Silicon Nanocrystals

Self-Ordered Voids Formation in SiO₂ Matrix by Ge Outdiffusion

Evaluation of optical and electronic properties of silicon nano-agglomerates embedded in SRO: applying density functional theory

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Optical and Structural Properties of Silicon Nanocrystals Embedded in SiOx Matrix Obtained by HWCVD

Cited by 10 publications

References 35 publications

Synthesis and Luminescent Properties of Silicon Nanocrystals

Synthesis and Luminescent Properties of Silicon Nanocrystals

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

Evaluation of optical and electronic properties of silicon nano-agglomerates embedded in SRO: applying density functional theory

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Optical and Structural Properties of Silicon Nanocrystals Embedded in SiO_x Matrix Obtained by HWCVD

Self-Ordered Voids Formation in SiO₂ Matrix by Ge Outdiffusion