Optical and structural properties of Diamond/GaN films

Yu, Qin; Liu, Weiping; Zhang, Wei; Bai, Xu; Zhang, Ping; Liao, Yongli; Wang, Guanzhong; Fang, Rongchuan

doi:10.1016/j.diamond.2006.09.027

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2008

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“…However, the diamond films deposited were porous with low crystal quality and poor adhesion. Recently, deposition of continuous boron-doped diamond films on p-GaN substrate by hot-filament CVD was reported …”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Diamond Films on Patterned GaN Substrates via a Thin Silicon Nitride Protective Layer

Zou

Yang

Chong

et al. 2008

Crystal Growth & Design

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Integrating diamond films with GaN-based devices may enhance heat dissipation and thus improve device performance for high power loading. Direct deposition of diamond films on GaN layers has been hampered by GaN degradation in the chemical vapor deposition environment for diamond growth. In this work, three approaches were introduced to grow high-quality diamond films on patterned GaN substrates via a thin silicon nitride protective layer, that is, (i) a two-step process involving an initial rapid growth step, (ii) addition of nitrogen to hydrogen-based plasma to suppress reactions between GaN and hydrogen, and (iii) deposition in argon-based plasma. Continuous, adherent, and high-quality micro-and nanocrystalline diamond films were successfully deposited. All three approaches were effective in reducing plasma-induced GaN decomposition and etching, and in eliminating film cracks and delamination.

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Section: Introductionmentioning

confidence: 99%