Chemical Vapor Deposition of Diamond Films on Patterned GaN Substrates via a Thin Silicon Nitride Protective Layer

Zou, Yousheng; Yang, Yong; Chong, Y.M.; Ye, Q.; He, Bang-Quan; Yao, Zehan; Zhang, Wenjun; Lee, S. T.; Cai, Yong; Chu, Hae-Nuh

doi:10.1021/cg070267a

Cited by 27 publications

(27 citation statements)

References 25 publications

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“…Several studies have showed that the direct growth of diamond on GaN layers under typical CVD conditions and at higher temperatures (>600 °C) is impossible without a protection interlayer . Although the normal melting point of GaN is around 2500 °C, GaN reacts with hydrogen at temperatures around 800 °C .…”

Section: Discussionmentioning

confidence: 99%

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Ižák

Babchenko

Jirásek

et al. 2014

Physica Status Solidi (b)

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Diamond-on-GaN heterostructure is a promising hybrid material system with a variety of applications such as heat spreaders, high-temperature, and high-power devices. From a practical point of view, polycrystalline diamond is shown to be an attractive solution to the limited use of the expensive monocrystalline diamond substrates. Here we present selective area diamond deposition on AlGaN/GaN layers focusing on the elimination of surface and metal contact damage (Ni, NiO, Ir, and IrO 2 ) and suppressing the spontaneous nucleation of diamond. Metal contacts are important for further applications such as diamond-coated GaN based electronic devices. The growth of diamond films was performed by microwave chemical vapor deposition in different gas mixtures with the addition of CO 2 or N 2 to CH 4 /H 2 . Adding CO 2 resulted in polycrystalline (PCD), while adding N 2 led to the formation of nanocrystalline diamond film (NCD). The diamond deposition was carried out using selective area nucleation in a three-layer sandwich structure (polymer/seeding layer/polymer), which avoided damage to the electrode and GaN surfaces from ultrasonic seeding by diamond particles. No protective layer was used on the GaN surface before diamond deposition, i.e., diamond films were grown directly on the AlGaN/GaN heterostructures. In the case of NCD deposition, no surface damaging of GaN was observed. For both NCD and PCD films, increasing methane from 1% to 2% in H 2 minimized the surface damage of GaN films.

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Section: Discussionmentioning

confidence: 99%

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Ižák

Babchenko

Jirásek

et al. 2014

Physica Status Solidi (b)

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“…The conventional thermal activation is an inefficient route to cause gases to react. Chemical reactions take place when chemical bonds are broken in reactant molecules and new bonds are formed in the products, which are directed related to the vibrational and electronic excitations [6]. Resonant vibrational excitations of reactant molecules could be more efficient in energy coupling than global thermal heating via direct energy deposition on the molecular bonds to drive the reactions.…”

Section: Introductionmentioning

confidence: 99%

“…Resonant vibrational excitations of reactant molecules could be more efficient in energy coupling than global thermal heating via direct energy deposition on the molecular bonds to drive the reactions. Besides, the reaction path could be steered through localizing energy to a selected bond of a molecule [6][7][8][9][10]. Laserassisted MOCVD takes the advantage of matching the laser light wavelength to the energy difference for a specific transition in precursor molecules.…”

Section: Introductionmentioning

confidence: 99%

Influence of resonant and non-resonant vibrational excitation of ammonia molecules in gallium nitride synthesis

Rabiee-Golgir¹,

Zhou²,

keramatnejad³

et al. 2015

International Congress on Applications of Lasers &Amp; Electro-Optics

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Attempts on the selective promotion of gallium nitride (GaN) growth were investigated by deploying laserassisted vibrational excitation of reactant molecules, which deposits energy selectively into specific molecules and activate the molecules towards the selected reaction pathways. Laser-assisted metal organic chemical vapor deposition (LMOCVD) of GaN was studied using a wavelength-tunable CO 2 laser. The NH-wagging modes (υ 2) of ammonia (NH 3) precursor molecules are strongly infrared active and perfectly match the emission line of the CO 2 laser at 9.219, 10.350, and 10.719 µm. On-and off-resonance excitations of molecules were performed via tuning the incident laser wavelengths at on-resonant wavelength 9.219 µm and off-resonant wavelength of 9.201 µm. The on-resonant vibrational excitation allowed a largest fraction of the absorbed laser energy coupled directly into NH 3 molecules whereas energy coupling under off-resonant excitations is less efficient in energy coupling and influencing the GaN growth process. The GaN deposition rate was enhanced by a factor of 2.6 accompanied with an improvement of crystalline quality under the on-resonant excitation. Optical emission spectroscopic (OES) studies confirmed that the on-resonant vibrational excitation effectively promotes the dissociation of NH 3 molecules and creates N-containing species favoring the GaN growth. This study indicates that the resonant vibrational excitation is an efficient route coupling energy into the reactant molecules to surmount the chemical reaction barrier and steering the growth process.

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“…Therefore, requirement (a) can be well satisfied by placing the active layers directly on top of highly thermally conductive diamond wafers. Such structures can be potentially realized by growing diamond on GaN [9][10][11][12][13], by growing epitaxial quality GaN on diamond [14,15], or by atomic attachment as demonstrated by Francis et al [4]. The requirement (b) has to include other constraints on wafer thickness discussed in Sec.…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier-Series Expansion

Babic

2013

Journal of Heat Transfer

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Thermal analysis of planar and near-square semiconductor device chips employing angular Fourier-series (AFS) expansion is presented for the first time. The determination of the device peak temperature using AFS requires only a single two-dimensional computation, while full three-dimensional temperature distribution can be obtained, if desired, by successively adding higher-order Fourier terms, each of which requires a separate 2D computation. The AFS method is used to compare the heat spreading characteristics of AIGaN/GaN high-electron-mobility transistors (HEMTs) fabricated on silicon, silicon carbide, and synthetic diamond. We show that AIGaN/GaN HEMTs built using GaN/diamond technology can offer better than half the thermal resistance of GaN/SiC HEMTs under worst-case cooling conditions. Furthermore, we show that, if left unmanaged, an inherent and non-negligible thermal boundary resistance due to the integration of semiconductor epilayers with non-native substrates will dampen the benefits of highly conductive substrates such as SiC and diamond.

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Chemical Vapor Deposition of Diamond Films on Patterned GaN Substrates via a Thin Silicon Nitride Protective Layer

Cited by 27 publications

References 25 publications

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Influence of resonant and non-resonant vibrational excitation of ammonia molecules in gallium nitride synthesis

Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier-Series Expansion

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