Optical and structural characteristics of tin oxide thin films deposited by filtered vacuum arc and spray pyrolysis

Abstract

Tin oxide (SnO2) thin films were deposited on commercial microscope glass and UV fused silica substrates (UVFS) using spray pyrolysis and filtered vacuum arc deposition (FVAD) system. During deposition, the substrates temperature was kept at 400 °C. The structure and composition were determined using X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS), respectively. The XRD patterns of SnO2 thin films deposited with the two systems on hot substrates were found to be polycrystalline. The average transmission of the films in the VIS was 80% to 85%. The film optical constants were determined by normal incidence transmission measurements. The refractive indices of FVA deposited films were in the range 2.11 to 2.0, and those of spray deposited ones were 1.97 to 1.93. The extinction coefficients of the deposited films were in the range 0.29 and 0.11 to approximately 0 for FVAD and spray pyrolysis, respectively, depending on wavelengths. The optical band gap, Eg, was determined from the dependence of the absorption coefficient on the photon energy at short wavelengths, and were 3.80 eV and 3.90 eV for spray pyrolysis and FVA deposited SnO2 thin films, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Non-Absorbing Dielectric Materials for Surface-Enhanced Spectroscopies and Chiral Sensing in the UV

“…For each material, we obtained from the Refs. [ 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 ] the energy for which the imaginary part of the complex dielectric function, , exceeds the value of 0.5. For example, the amplitude of a plane wave propagating through a dielectric media with and decays a factor for path-lengths roughly exceeding the wavelength.…”

“…Materials with HRI, , moderate (MRI), , and low refractive index (LRI), are considered and compared. NFE and OCD calculations, based on Mie theory [ 48 , 49 ], are done for all the materials proposed [ 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 ]. To the best of our knowledge, these materials have not been proposed yet as promising UV nano-alternative for surface enhanced spectroscopy.…”

The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

“…The second candidate is ZnO; however, it is difficult to produce p-type ZnO due to self-compensation effects [12][13][14]. Compared with ZnO, SnO 2 is a wide band gap semiconductor (3.6-4 eV) [15,16] with good chemical, mechanical, and thermal stabilities [17][18][19]. Additionally, tin can easily be doped by group III metals because tin has a valence of 4.…”

Investigation of Tin Oxide Based Nanocomposites for Li-Ion Batteries

“…Tin oxide thin lms were prepared using various methods, e.g., spray pyrolysis [2,3], reactive magnetron sputtering [4], reactive ion assisted deposition [5], chemical vapor deposition (CVD) [6], and by ltered vacuum arc deposition (FVAD) [7,8]. Tin oxide is an attractive material as a potential substitute for the conventional graphite anode in lithium ion batteries, because the theoretical capacity of SnO 2 (1494 mAh g −1 ) has been estimated to be superior to that of graphite (372 mAh g −1 ) [9] but also owing to the reasonably low potentials and high volumetric and gravimetric capacities [10].…”