Optical and photoelectric properties of TlGaSe2 layered crystals

Kalomiros, John; Kalkan, N.; Hanias, M. P.; Anagnostopoulos, A. N.; Kambas, K.

doi:10.1016/0038-1098(95)00423-8

Cited by 70 publications

(58 citation statements)

References 14 publications

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“…It is important that some transitions involving the levels associated with defects and excitons are observed in the absorption spectra of p-TlGaSe 2 single crystals at the temperatures below 120 K [22]. The relevant bands are broader but still present in the spectra recorded at 200 K [23]. It is known that, at 10 K, p-TlGaSe 2 has three different peaks at 2.131, 2.159 and 2.208 eV [5], while p-TlGa 0.999 Pr 0.001 Se 2 exhibits two peaks with the energies 2.144 and 2.174 eV at the same temperature.…”

Section: Resultsmentioning

confidence: 99%

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Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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Abstract. We report the results of experimental studies for the optical absorption in TlGaSe 2 :Zn 2+ single crystals grown using a modified Bridgman-Stockbarger technique. The absorption measurements at different temperatures are performed with the steps 50 K. The analysis of the experimental data yield in the absorption coefficients of TlGaSe 2 :Zn varying from 20 to 800 cm -1 in the temperature region 100-300 K. Direct and indirect bandgap values for TlGaSe 2 :Zn 2+ are calculated as functions of temperature. These values are respectively equal to 2.22 and 2.04 eV at 100 K. It is revealed that the spectral dependences of the absorption coefficient in the region 60-130 cm -1 follow the Urbach rule, whereas the corresponding steepness parameter and the Urbach energy increase with increasing temperature.

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Section: Resultsmentioning

confidence: 99%

“…It should also be noted that some representatives of the A III B III C 2 VI family, e.g. TlInTe 2 and TlInSe 2 , demonstrate a positive temperature slope of the bandgap-energy variation [23]. The temperature dependence of the bandgap can be presented using the empirical relationship suggested by Varshni [39]:…”

Section: +mentioning

confidence: 99%

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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“…Research has focused on the anisotropy of their optical and electrical properties and some aspects of their structural anisotropy. Layered ternary crystal TlGaSe 2 is one of the anisotropic crystals whose properties has recently become the subject of extensive research [1][2][3][4][5][6]. The anisotropy arises from the fact that the bonding within the layers is considerably stronger than that between the layers.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals

Yuksek¹,

Gasanly²

2005

Cryst. Res. Technol.

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Raman spectra of TlGaSe 2 crystal at different temperatures are discussed. The temperature dependence of frequency shifts and linewidths of the Raman peaks in the frequency region of 10-320 cm -1 have been measured in the range from 50 to 320 K. The analysis of the experimental data showed that the temperature dependencies of phonon frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.

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“…[2][3][4][5][6]. It was established that the fundamental absorption edge is formed by indirect and direct transitions with E gi = 1.96 and 2.07 eV, E gd = 2.11 and 2.19 eV at T = 300 and 10 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals

Goksen¹,

Gasanly²,

Turan³

2006

Cryst. Res. Technol.

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Photoluminescence (PL) spectra of Tl 4 Ga 3 InSe 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm -2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively.

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Optical and photoelectric properties of TlGaSe2 layered crystals

Cited by 70 publications

References 14 publications

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals

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Optical and photoelectric properties of TlGaSe2 layered crystals

Cited by 70 publications

References 14 publications

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

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Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals