Absorption in Tl4Ga3InSe8 Layered Crystals. -Single crystals of the title compound are prepared by the modified Bridgman method and characterized by powder XRD and transmission and reflection spectroscopy. The compound exhibits an indirect band gap of 1.94 eV. Photoluminescence spectroscopy in the wavelength region of 600-750 nm in the temperature range of 17-68 K reveals a broad emission band centered at 652 nm at 17 K. It is suggested that the radiative transitions originate from recombination of charge carriers from donor to acceptor states. -(GOKSEN, K.; GASANLY*, N. M.; TURAN, R.; Cryst.