Optical and microstructural properties of p-type SrCu2O2: First principles modeling and experimental studies

Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures

“…The energy gap, E g , of the films after annealing was estimated from the onset of absorption by employing the Tauc plot and it was found to be around 3.24 eV. This value is in agreement with the reports on E g of bulk SCO (3.34 eV) 17 as well as on SCO thin films deposited at 300 °C by PLD using the 248 nm laser (3.3 eV) 5, 8 or at 350 °C by e‐gun evaporation (3.12 eV) 6.…”

The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes

“…The onset of absorption for both films was not affected by the substrate temperature and by using the relation: [α(hv)] 2 α(hv − E g ), where α is the absorption coefficient (related to transmittance, T, and film thickness, d, through the relation: T~e − αd ) and hv is the photon energy, the energy gap, E g , of the films was calculated to be around 3.3 eV. This result is similar to the reports on E g of bulk SCO (3.34 eV) [16] as well as on SCO thin films deposited by PLD at 300°C (3.3 eV) [5] or at 350°C by electron-gun evaporation (3.12 eV) [6].…”

Effect of thermal annealing on electrical and optical properties of Ba-doped SrCu2 O2 thin films on glass substrates

“…In Fig. 3b, related to the film annealed for 5 min, all the peaks pointed at 139, 157, 182, 240, 290, 520 and 576 cm À1 can be associated to the SCO phase as already observed in SCO ceramics [38] and in a polycrystalline SCO target [39]. When the film was annealed for only 3 min, its Raman spectrum in Fig.…”