The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes

P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

“…It has been shown in previous investigation that the p-SrCu 2 O 2 /n-Si heterojunction with low temperature(300 • C) deposited SrCu 2 O 2 has better p/n junction properties than that with high temperature(500 • C) deposited SrCu 2 O 2 films because non-stoichiometric SrCu 2 O 3 phase appeared in high substrate temperature [27]. But in our experiments, we found that SrCu 2 O 3 phase could not be detected in the SCCO film deposited with substrate temperature of 540 • C. All the SCCO/n-Si heterojunctions have obvious rectifying behavior though the crystallinity of the SCCO films deposited at low substrate temperature is very poor.…”

“…There are many reports on fabrication and optoelectronic applications of Sr 1−x M x Cu 2 O 2 (M = Ca, K) films [23][24][25][26][27][28][29]. To our knowledge, SrCu 2 O 2 /Si heterojunctions have been obtained by PLD with different substrate temperatures and laser wavelengths [27,28], but Sr 0.9 Ca 0.1 Cu 2 O 2 (SCCO)/Si heterojunction and its photovoltaic performance have not been investigated. In this study, SCCO films were prepared on glass and n-Si (1 0 0) substrates and the electrical property of the SCCO/n-Si heterojunction was analyzed by current-voltage technique at room temperature.…”

Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures

“…X‐ray diffraction measurements (Rigaku D/MAX‐2000H rotating anode (12 kW) Cu K α monochromated diffractometer) were used for identifying the crystallographic phases in the structure and transmittance in the UV‐NIR spectrum (Perkin Elmer, Lambda 950) for evaluating the optical properties of the films. The SCO/Si diodes were fabricated using standard photolithographic technique which has been described elsewhere 13. It should be noted that the annealing of the diodes preceded their fabrication.…”

“…It should be noted that the annealing of the diodes preceded their fabrication. The junction area was 0.38 mm 2 and Ni/Au and silver‐paste were used as Ohmic contacts on SCO 13 and Si, respectively. The native oxide on the Si substrate was estimated by ellipsometry to be not more than 4 nm 13.…”

“…In a previous investigation we had shown that undoped SCO can be deposited by PLD (248 nm laser) on substrates with temperatures as low as 300 °C, which is considered compatible with the processing procedure of many technological devices and that it forms rectifying diode characteristics when deposited on n‐Si substrate 13. Furthermore, it has been suggested, following theoretical calculations 14, 15 that the incorporation of Ba in the SrCuO system leads to a material with enhanced properties.…”