Optical and magnetic properties of Mn in bulk GaN

Wołoś, Agnieszka; Palczewska, M.; Zając, M.; Gosk, J.; Kamińska, M.; Twardowski, A.; Boćkowski, Michał; Grzegory, I.; Porowski, S.

doi:10.1103/physrevb.69.115210

Cited by 95 publications

(78 citation statements)

References 40 publications

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“…The hybridization is more pronounced in the case of t 2↑ . (The structure of both e 2↑ and t 2↑ is the same as for Mn in GaN, 84,85 while the contribution of the Fe to the VBM in ZnO is lower than that of the Mn in GaN.) The wave functions of the two Fe-induced e 2↓ and t 2↓ states, degenerate with the conduction band continuum, are very similar to those of the spin up e 2↑ and t 2↑ (see Summing up the theory part of the paper, there are fundamental difficulties with a correct GGA description of the q = 0 charge state.…”

Section: Sp-d Couplingmentioning

confidence: 94%

Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s,p−d exchange interaction

et al. 2016

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Section: Sp-d Couplingmentioning

confidence: 94%

Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s,p−d exchange interaction

et al. 2016

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“…strong PL polarization and lack of other magneto-optical effects, and related them to spin selective carrier trapping by photo-ionized Cr centers in ZnSe lattice [14]. This suggests that, similarly like in GaMnN [15], Mn can be present in ZnO lattice in two charge states. In fact, two Mn states in ZnMnO thin films were observed in photoemission study [16], where Mn 3p states show two contributions with different binding energies separated by about 4 eV.…”

Section: The Mnmentioning

confidence: 99%

Do We Understand Magnetic Properties of ZnMnO?

et al. 2007

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Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.

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“…Ionization energy of the Mn acceptor in III-V semiconductors increases with increasing host crystal band gap from 0.112 eV in GaAs, 0.220 eV in InP, 0.388 eV in GaP [12], up to 1.8 eV [10] and 2.6 eV [9] in nitrides, GaN and AlN, respectively. The ionization energy in GaAs, InP and GaP has been determined with spectroscopic precision by Tarhan et al [12].…”

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confidence: 97%

“…, which configuration corresponds to high localization of a hole on Mn acceptor, so that the whole state can be described by the crystal-field theory [9][10][11].…”

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confidence: 99%

Mn configuration in III‐V semiconductors and its influence on electric transport and semiconductor magnetism

Wołoś

Piersa

Strzelecka

et al. 2009

Phys. Status Solidi (c)

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GaAs and GaP doped with Mn at wide range of concentrations were studied and compared to literature data of InP and nitrides, GaN and AlN, in aim to understand the mechanism of ferromagnetism observed in some of them. Doping with a moderate Mn concentrations resulted in similar features of electric transport in these compounds, that is p‐type conductivity in host crystal valence band activated with energy related to the ionization energy of Mn acceptor at high temperature and hopping conductance in Mn impurity band dominating at low temperatures. From the magnitude of hopping conductance it was possible to determine Mn configuration, which occurred to be Mn2+(d5) with a bound hole on it, with different localization radius decreasing systematically in a series from GaAs through InP down to GaP and achieving full localization resulting in Mn3+(d4) configuration in wide band gap nitrides, GaN and AlN. A critical concentration of Mn for metal‐insulator transition related to full overlap of Mn‐bound hole wave functions could be calculated as equal to 3.6 × 1020 cm–3 in GaAs, 2.5 × 1021 cm–3 in InP and 3.7 × 1022 cm–3 in GaP, where the latter one corresponds to above 100 at.%. Similarly to GaP, metal‐insulator transition for GaN and AlN doped with Mn cannot be achieved even for 100% of Mn concentration. In GaAs doped with Mn on the level of about 2.8 × 1019 cm–3 split Mn impurity band is formed. Conductivity in the band at this Mn concentration is characterized by high mobility, comparable in magnitude to the mobility in GaAs valence band. Ferromagnetism of GaAs with high Mn concentration (> 1.1 ‐ 1.6 at.%) occurs in samples being on the metallic side of metal‐insulator transition what means that a mediating center in ferromagnetic ordering of Mn centers is totally unlocalized hole. This mechanism is difficult to realize in other studied III‐V compounds because of higher localization of Mn‐bound holes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical and magnetic properties of Mn in bulk GaN

Cited by 95 publications

References 40 publications

Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s,p−d exchange interaction

Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s,p−d exchange interaction

Do We Understand Magnetic Properties of ZnMnO?

Mn configuration in III‐V semiconductors and its influence on electric transport and semiconductor magnetism

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