Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

BV‐2 microglial cells sense micro‐nanotextured silicon surface topology

“…Previously, we have used laser processing of thin film silicon to modify its external and internal structure, 10 producing a material that can be exploited in a range of applications. [11][12][13][14][15][16] Processing in air near the ablation threshold produces spatially disordered, conical features and a new material that has many potential technological applications, including the study of cell-substrate interactions. The use of pulsed laser beams is one of the leading techniques in the fabrication of polycrystalline silicon (poly-Si) layers used as an active material in thin-film transistors, solar cells, and field emission devices.…”

THz generation from a nanocrystalline silicon-based photoconductive device

“…Our samples were grown by the HWCVD technique using a tungsten filament as a heating element (described elsewhere [18][19][20][21]). To grow nanocrystalline silicon, the hydrogen dilution of silane gas was held at H 2 /SiH 4 = 14, while the substrate temperature was kept constant at 200 • C during the growth.…”

Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation

“…Hence the use of silicon as cold cathode field emitters leads towards the possibility of making commercially viable FED's [9]. Preliminary research in using pulsed excimer laser annealed planar silicon cold cathode emitters has shown that silicon has the potential to become the desired material for FED's [11][12][13][14][15][16]. Pulsed excimer laser crystallization (ELC) is also well known in the manufacturing world to produce crystalline silicon for use in electronics and active-matrix flat panel displays and other sensor technologies in the industry [17][18][19].…”