Optical and electronic properties of vanadium in gallium arsenide

Abstract

Gallium arsenide as an optical strain gauge Rev.The effects of vanadium doping on the electrical and optical properties of GaAs were systematically studied in melt-grown crystals prepared by the liquid-encapsulated Czochralski and horizontal Bridgman techniques and in epitaxial crystals prepared by liquid-phase electroepitaxy. By employing deep-level transient spectroscopy, Hall-effect measurements and the V2+ (3d 3) and V3+ (3d 2) intracenter optical-absorption spectra, one vanadium-related level was identified in all crystals, i.e., the substitutional-vanadium acceptor level (y 3 + /y2+) at 0.15 + 0.01 e Y below the bottom of the conduction band. From the absorption measur;-ments we conclude that the vanadium (V4+;V3+) donor level must be located within the valence band. Because of its energy position, the above level cannot account for the reported semi-insulating properties of V-doped GaAs. We observed no midgap levels resulting from vanadium-impurity (defect) complexes. The high resistivity reported for certain V-doped GaAs crystals must result from indirect effects of vanadium, such as the gettering of shallowlevel impurities.

Optical characterization of gallium antimonide highly doped with manganese

“…Hennel et al [2] concluded that in vanadium-doped GaAs subtle chemical background effects, such as gettering, lowered the concentration of residual donors and improved the material electronic properties. A high concentration of magnetic ions, such as Mn, could lead to novel semiconductor materials with specific magnetic and electronic properties-diluted magnetic semiconductors [3].…”

Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs

“…Vanadium doped, semi-insulating GaAs crystals were prepared by the liquid encapsulated Czochralski (LEC) technique with a vanadium concentration of 7=8 x 10 16 cm -3 [10]. Zero pressure luminescence was measured in a CF1204 (Oxford) cryostat.…”

Optical and theoretical investigations of V2+ ion in GaN

“…This information guides to the assignment of the emission band. The nature of vanadium doping related defects have been the object of different experimental studies [14][15][16]. In III-V compounds, the transition metals are usually incorporated on substitutional cation sites.…”