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Silicon Carbide (4H-SiC), power UMOSFET's were fabricated and characterized from room temperature to 200 C. The devices had a 12-m thick lightly doped n-type drift layer, and a nominal channel length of 4 m. When tested underFluorinert TM at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm 2 /V 1 s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm 2 /V 1 s at 100 C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R on;sp ) was calculated to be as low as 74 m 1 cm 2 at 100 C under the same gate bias.

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