Advances in SiC materials and devices: an industrial point of view

Siergiej, R.R.; Clarke, R.C.; Sriram, S.; Agarwal, Anant; Bojko, Richard; Morse, A.W.; Balakrishna, V.; MacMillan, M. F.; Burk, Albert A.; Brandt, C.D.

doi:10.1016/s0921-5107(98)00438-3

Cited by 75 publications

(27 citation statements)

References 10 publications

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“…[1][2][3][4] However, development of low resistance ohmic contacts to p-type SiC is a key technology issue in the fabrication of highly reliable and high performance devices. 5,6) Crofton et al 7) found that binary Ti-Al alloy contacts yielded very low contact resistance to p-type SiC after annealing at temperatures higher than 1000 C. After that, extensive investigations for improvement of the binary Ti-Al contacts and development of other p-type ohmic contact materials have been carried out by various authors.…”

Section: Introductionmentioning

confidence: 99%

Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC

et al. 2009

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Growth and microstructure of ternary Ti 3 SiC 2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti 3 SiC 2 layer was fabricated by deposition of Ti/Al contacts (where a slash ''/'' indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000 C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti 3 SiC 2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti 3 SiC 2 layer and determination of the Ti 3 SiC 2 /4H-SiC interface structure. The Ti 3 SiC 2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of ð0001Þ TSC ==ð0001Þ S and ½0 1 110 TSC == ½0 1 110 S where TSC and S represent Ti 3 SiC 2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti 3 SiC 2 and 4H-SiC.

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Section: Introductionmentioning

confidence: 99%

Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC

et al. 2009

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“…[1][2][3][4] One of materials-related issues is lack of low resistance Ohmic contact materials for p-type 4H-and 6H-SiC. Development of such the Ohmic contact is mandatory in order to manufacture these devices.…”

Section: Introductionmentioning

confidence: 99%

Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-Type 4H-SiC

et al. 2002

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The effect of the Al concentration and layer structure on the electrical and microstructural properties of TiAl Ohmic contacts for p-type 4H-SiC were investigated. The Al concentration was found to effect strongly on these contact properties, and the specific contact resistance of 1 × 10 −5 -cm 2 was obtained for the TiAl contacts with the Al concentration higher than 77 at% after annealing at 1000 • C. However, agglomeration of Al was observed after annealing, which caused the rough surface morphology. On the other hand, the TiAl contacts with the Al concentration lower than 75 at% showed non-Ohmic behavior and had smooth surface morphology after annealing at 1000 • C. It was found from X-ray diffraction analysis that the interface structures were strongly influenced by the Al concentrations of the TiAl contacts. For the TiAl contact with high Al concentration,

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“…SiC has been investigated extensively over the past two decades because its physical properties, such as large breakdown field, excellent thermal conductivity, and high electron saturation velocity, are desirable for high-power and high-temperature electronics. [11,12] All of these attractive properties, including maximum speed and optimal performance, rely critically on and are often limited by Ohmic contact to p-type SiC. [13] Most studies to date on obtaining this Ohmic contact have focused on TiAl-based metals, [14,15] which are the only materials currently available that yield significantly low contact resistance.…”

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confidence: 99%

Interface Atomic‐Scale Structure and its Impact on Quantum Electron Transport

et al. 2009

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Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti3 SiC2 interface in Ohmic contact to p-type SiC, which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

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Advances in SiC materials and devices: an industrial point of view

Cited by 75 publications

References 10 publications

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-Type 4H-SiC

Interface Atomic‐Scale Structure and its Impact on Quantum Electron Transport

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