Optical and electrochromic properties of RF reactively sputtered WO3 films

Washizu, E.; Yamamoto, Akihisa; Abe, Yoshio; Kawamura, Midori; Sasaki, Katsutaka

doi:10.1016/j.ssi.2003.08.030

Cited by 136 publications

(59 citation statements)

References 9 publications

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“…Measured refractive index of CaF 2 thin films by Filmetrics F20 is 1.44 at 550 nm. This result is in good agreement with literature [5,25,26].The spectral dependence of the refractive index for a CaF 2 film is presented in Fig. 4.…”

Section: Ne C -Etin Et Al / Materials Letters 91 (2013) 175-178supporting

confidence: 91%

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The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Çetin¹,

Korkmaz²,

Elmas³

et al. 2013

Materials Letters

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a b s t r a c tIn this study, calcium fluoride (CaF 2 ) thin films have been prepared by Thermionic Vacuum Arc (TVA) technique on glass substrates. In this technique CaF 2 thin films are produced by condensing the plasma of anode material generated in the TVA setup under high vacuum conditions on glass substrates. Crystal structures as well as optical and surface properties of CaF 2 antireflective (AR) coated thin films were investigated. X-ray diffraction (XRD) measurements showed that amorphous CaF 2 thin films were formed. Optical and surface properties of CaF 2 films have been studied based on optical transmittance, reflectance, refractive index and atomic force microscopy imaging (AFM). Our results also show that CaF 2 coated samples exhibit lower reflectance (R). From our optical studies, we have observed that CaF 2 thin films have high AR properties.

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Section: Ne C -Etin Et Al / Materials Letters 91 (2013) 175-178supporting

confidence: 91%

“…According to Lorentz-Lorenz equation, refractive index increases with rising of the film density [25]. The crystal structure of CaF 2 is cubic formation.…”

Section: Ne C -Etin Et Al / Materials Letters 91 (2013) 175-178mentioning

confidence: 99%

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Çetin¹,

Korkmaz²,

Elmas³

et al. 2013

Materials Letters

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show abstract

“…3a); the broad peak centered at about 2θ = 25° stems from the glass substrate. This was expected since WO 3 crystallizes only when the temperature exceeds 200°C [30], while the maximum temperature that the film could reach via the plasma process heating was about 170°C. Starting at room temperature, the sample's temperature increased approximately linearly with time, indicating that the heating power was not balanced by any of the heat loss mechanisms (conduction, radiation).…”

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confidence: 95%

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

Mohamed

Anders

2006

Surface and Coatings Technology

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Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios.The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO 3 , with little incorporation of nitrogen, therefore the films were labeled as WO x (N y ). Oxygen had a great effect not only on the composition but on the structure of WO x (N y ) films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, LBNL-59900 1 the room temperature resistivity decreased from 1.65 × 10 8 to 1.82 × 10 -2 Ωcm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WO x (N y ) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

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“…WO3 shows a strong ion intercalation behavior which is this ion insertion is combined with a strong change of the oxide and this effect is exploited intensively in electrochromic (EC) device [2]. Several method for prepared a WO3 have been studied by researcher include vacuum evaporation, pulse laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD), electrodeposition and solgel deposition [3]. RF and DC Magnetron Sputtering process widely used due to better adhesion on the substrate and Sputter deposited films have a composition close to source material.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Flow Rate on the Characteristics of the Tungsten Oxide Using RF Magnetron Sputtering

Abdullah

Nayan

Sahdan

2015

AMM

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Abstract-Tungsten Oxide (WO3) thin films were deposited using 99.9% pure tungsten target onto ITO substrate using RF magnetron sputtering in the range oxygen flow rates of 30-50%. The influence of the oxygen flow rate on characteristic of WO3 thin films has been investigated. The transmittance, resistivity, crystallite, roughness, and surface morphology were measured by UVVis, 2-point probe, X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Field Emission Scanning Electron Microscopy (FE-SEM) respectively. Experimental result showed that the deposition rate of WO3 thin films decreased by increasing oxygen flow rate. A poor crystalinity or more too amorphous of WO3 thin films produces by using various oxygen content. A higher optical transmittance spectrum detected at 30% oxygen content about 86% at wavelength 550nm. I.INTRODUCTION WO3 have been studied due to their characteristic on optical transmittance since 1980s with the realization WO3 acting as electrochromic materials. The most promising WO3 widely used in smart glass, gas sensor, automotive rear-view mirrors, and sun roofs [1]. WO3 shows a strong ion intercalation behavior which is this ion insertion is combined with a strong change of the oxide and this effect is exploited intensively in electrochromic (EC) device [2]. Several method for prepared a WO3 have been studied by researcher include vacuum evaporation, pulse laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD), electrodeposition and solgel deposition [3]. RF and DC Magnetron Sputtering process widely used due to better adhesion on the substrate and Sputter deposited films have a composition close to source material. Since the electrical properties, optical properties and microstructure of the sample is depend on the sputtering condition, thus it is important to control sputtering parameter to obtain a good WO3 thin film for EC materials. In this study we examine influence of oxygen flow on WO3 thin film using 30-50% oxygen flow by using flow ratio of O2/(Ar +O2).

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Optical and electrochromic properties of RF reactively sputtered WO3 films

Cited by 136 publications

References 9 publications

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

Influence of Oxygen Flow Rate on the Characteristics of the Tungsten Oxide Using RF Magnetron Sputtering

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