Influence of Oxygen Flow Rate on the Characteristics of the Tungsten Oxide Using RF Magnetron Sputtering

Abstract

Abstract-Tungsten Oxide (WO3) thin films were deposited using 99.9% pure tungsten target onto ITO substrate using RF magnetron sputtering in the range oxygen flow rates of 30-50%. The influence of the oxygen flow rate on characteristic of WO3 thin films has been investigated. The transmittance, resistivity, crystallite, roughness, and surface morphology were measured by UVVis, 2-point probe, X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Field Emission Scanning Electron Microscopy (FE-SEM) respectively. Experimental result showed that the deposition rate of WO3 thin films decreased by increasing oxygen flow rate. A poor crystalinity or more too amorphous of WO3 thin films produces by using various oxygen content. A higher optical transmittance spectrum detected at 30% oxygen content about 86% at wavelength 550nm. I.INTRODUCTION WO3 have been studied due to their characteristic on optical transmittance since 1980s with the realization WO3 acting as electrochromic materials. The most promising WO3 widely used in smart glass, gas sensor, automotive rear-view mirrors, and sun roofs [1]. WO3 shows a strong ion intercalation behavior which is this ion insertion is combined with a strong change of the oxide and this effect is exploited intensively in electrochromic (EC) device [2]. Several method for prepared a WO3 have been studied by researcher include vacuum evaporation, pulse laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD), electrodeposition and solgel deposition [3]. RF and DC Magnetron Sputtering process widely used due to better adhesion on the substrate and Sputter deposited films have a composition close to source material. Since the electrical properties, optical properties and microstructure of the sample is depend on the sputtering condition, thus it is important to control sputtering parameter to obtain a good WO3 thin film for EC materials. In this study we examine influence of oxygen flow on WO3 thin film using 30-50% oxygen flow by using flow ratio of O2/(Ar +O2).

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“…Magnetron sputtering has many benefits over other methods, including uniformity, smoothness, and strong adhesion deposition over a very substantial region. The ability to select substrate and target materials with high melting points and a high deposition rate enables simple manipulation of deposited layer thickness [73]. However, the reactive sputtering method has a variety of drawbacks, including target poisoning, low deposition rates, and arcing that produces imperfections in thin films [74].…”