A solution-processed organic ultraviolet photodetector (UV-PD) is introduced. The active layer of the UV-PD consists of poly(9,9dioctyl fluorenyl-2,7-yleneethynylene) (PFE) and N,N-bis-n-butyl-1,4,5,8-naphthalenediimide (BNDI) with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80 • C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1)/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm 2 UV light at 368 nm when 60 • C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.