Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films

Suri, Nikhil; Bindra, K. S.; Ahmad, Mifrah; Kumar, J.; Thangaraj, R.

doi:10.1007/s00339-007-4242-z

Cited by 16 publications

(6 citation statements)

References 11 publications

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“…From table 2 it is clear that the optical band gap decreases from 1.37 to 1.21 eV as Bi increases from 0 to 5 at.% in Te 15 (Se 100−x Bi x ) 85 glasses. Similar trends in optical band gap have also been observed by earlier workers [28,32]. Various optical parameters reported in tables 1 and 2 for x = 0 composition are in good agreement with earlier reported work [30][31][32][33].…”

Section: Absorption Coefficient Optical Band Gap and Dielectric Constantsupporting

confidence: 91%

“…The absorption coefficient (α) has been calculated using the relation [28] where d is the thickness of the film and T is the transmittance. The extinction coefficient (k), which is a measure of fraction of light lost due to scattering and absorption per unit distance of the participating medium, was calculated using the relation…”

Section: Absorption Coefficient Optical Band Gap and Dielectric Constantmentioning

confidence: 99%

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Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation

et al. 2011

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Thin films of Te 15 (Se 100−x Bi x ) 85 (x = 0, 1, 2, 3, 4 and 5 at.%) glassy alloys were deposited by thermal evaporation (at 10 −4 Pa) from bulk samples. Optical characterization of the films was done by analysing their transmission spectra taken in the spectral range 400-2300 nm. Swanepoel's method was used to calculate the refractive index (n) and extinction coefficient (k). It was found that the refractive index increases with an increase in Bi content. The Wemple-DiDomenico single-oscillator approach was used to calculate the average band gap energy (E o ), dispersion energy (E d ) and static refractive index (n o ). The absorption coefficient (α) and film thickness were calculated from the transmission spectra of the films. The optical band gap (E g ) was estimated using Tauc's extrapolation and was found to decrease from 1.37 to 1.21 eV with Bi addition from 0 to 5 at.% in glassy alloys. The decrease in optical band gap is explained on the basis of the decrease in cohesive energy of the samples and the difference of electronegativity of the atoms involved. The real (ε r ) and imaginary parts (ε i ) of the dielectric constant for the films were also calculated and reported.

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Section: Absorption Coefficient Optical Band Gap and Dielectric Constantsupporting

confidence: 91%

Section: Absorption Coefficient Optical Band Gap and Dielectric Constantmentioning

confidence: 99%

Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation

et al. 2011

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“…Such type of behavior supports the results of various workers 63 , 64 . The subsequent increase in the bismuth content in the annealed films causes an increase in the density defect states by creating more localized states over the bandgap which consequently decreases the bandgap values 65 .…”

Section: Resultsmentioning

confidence: 99%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

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“…In chalcogenide materials, the Fermi level is pinned near the middle of the gap by the presence of defect states. The addition of Bi in larger proportion in the present system unpin the Fermi level which leads to shifting of the Fermi level towards the conduction band and hence the changeover to an n-type semiconductor [19]. The values of preexponential factor r 0 as observed from Table 1 do not show any particular trend with Bi concentration.…”

Section: Electrical Propertiesmentioning

confidence: 45%

Electrical and optical properties of Sn10Sb20−xBixSe70 (0⩽x⩽8) glassy films

Ahmad

Kumar

Thangaraj

2009

Journal of Non-Crystalline Solids

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Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films

Cited by 16 publications

References 11 publications

Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation

Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Electrical and optical properties of Sn10Sb20−xBixSe70 (0⩽x⩽8) glassy films

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Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films

Cited by 16 publications

References 11 publications

Optical parameters of ternary Te15(Se100−xBix)85thin films deposited by thermal evaporation

Optical parameters of ternary Te15(Se100−xBix)85thin films deposited by thermal evaporation

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Electrical and optical properties of Sn10Sb20−xBixSe70 (0⩽x⩽8) glassy films

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Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation

Optical parameters of ternary Te₁₅(Se_100−xBi_x)₈₅thin films deposited by thermal evaporation