Electrical and optical properties of Sn10Sb20−xBixSe70 (0⩽x⩽8) glassy films

Laser Irradiation Effect on the Optical Band Gap of Se-Te-Al Thin Films

“…The additional absorption of Te containing chalcogenides are due to the increase in the number of thermally excited free carriers. The most important applications of chalcogenide are now in the field of optics [16][17][18][19][20][21][22] and arising mainly from their exhibited infrared transmitting properties [23,24]. Their potential uses are in integrated optics, optical imaging, optical data storage and infrared optics.…”

Laser irradiation induced photo-crystallization in nano-structured amorphous Se90−xHgxS10(x = 0, 5, 10, 15) thin films

“…which makes them feasible for several advanced applications like optical computing, optical data storage, ultrafast optical switches, optical sensors etc. [1][2][3][4] During the process of light-matter interaction, electrons and holes are created; these photo-created carriers may not remain free but can become trapped, or localized in one way or another in the band tail states of amorphous semiconductors. Such localized states exhibit a strong electron-phonon coupling which may lead to a structural rearrangement of the lattice, and hence changes in the physical properties causing photo-darkening, photo-expansion, photo-crystallization, etc.…”

Effects of laser irradiation on optical properties of amorphous and annealed Ga15Se81In4 and Ga15Se79In6 chalcogenide thin films

“…The optical properties of the materials used in the design and manufacture of infrared interference filters play a vital role in defining the spectral performance achievable from a multilayer filter design. Due to the technological importance, the optical properties and electrical properties of chalcogenide thin films have been subjected to a lot of investigations [1][2][3][4][5][6][7][8]. Thermal processes are known to be important in inducing crystallization in semiconducting chalcogenide glasses.…”