Laser Irradiation Effect on the Optical Band Gap of Se-Te-Al Thin Films

Abstract

Laser irradiation effect on the optical band gap of Se-Te-Al thin films has been studied. Optical data Analysis of thin films indicates indirect allowed transition in the Se-Te-Al system. Analysis of the result reveals that the optical band gap decreases with increasing irradiation time as well as Aluminum content. However, laser irradiation does not show a significant effect at higher Aluminum concentration. It might be due to lack of weak Se-Te bond as Te content decreases with increasing Al content. It shows that alloy with rich Al content is more stable against laser irradiation. It is also observed that absorption coefficient and extinction coefficient increases with laser irradiation time.

Intensity Dependent Photoconductivity in ZnO Nanostructured Film

“…Recently, ZnO attracted a great deal of attention due to its light detection properties with several studies related to photoconductivity [6]- [9]. Our previous study shows that laser light irradiation can produce significant effect on materials which is attributed to the optical absorption [3], [4], [10]- [12] however we didn't made study on Zn based material. There has been a significant rise in the number of scholarly publications addressing Zn based materials in the last decade indicating significant new interest [13]- [15].…”