Optical and electrical properties of amorphous thin films in Gex Te1-x system

Abstract

Ge, Tel_, thin films of different compositions are prepared on glass substrates by sputtering deposition. The optical transmittance, reflectance, electrical resistivity of the thin films axe measured as a function of composition,x. The optical energy gap and the electrical resistivity is highest when GexTe~.~ enters the GeTe2 phase due to its very ordered network structure resulting in narrow localized states in the amorphous energy band structure. Also, the refractive index and the extinction coefficient are lowest at the GeTe2 composition since the absorption tailing near the band edge is minimum.

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride

“…Composition ratio of N/(O+N) also increases with deposition power, and it is thought as the decrease of O involvement due to the fast deposition. When films are deposited with higher power, films may form in more non-stoichiometric structure due to the high deposition rate 10) .…”