Optical And Electrical Properties Of D.C. Sputtered Sn   1-x   Zr   x   O   2    Films

Szczyrbowski, J.; Rogels, Stephan; Dietrich, A.; Hermann, H. D.

doi:10.1117/12.961350

Cited by 2 publications

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“…As a result, the dielectric function of their respective samples compare favourably. Szczyrbowski et al [10] and Valkonen et al [12] have both sputtered much thinner films ( [12] (d =50 nm) , however they do not show the associated increase in ε i . However, it should be noted that their data fitting technique is based on a pertubative approach to Fresnel equations, and they assume shallow (depth/pitch < 0.07), purely sinusoidal gratings.…”

Section: Discussionmentioning

confidence: 99%

“…Unfortunately the plasma edge is located at too high an energy to make it an efficient solar absorber in its stoichiometric form [4,6,7]. However it is well known that the plasma energy and the optical and electrical properties of TiN x films are strongly dependent on the deposition conditions, film thickness and titanium-nitrogen ratio [6][7][8][9][10][11][12]. This present study is concerned with exploring these interesting optical characteristics in the visible part of the spectrum using the optical excitation of surface plasmons.…”

Section: Introductionmentioning

confidence: 99%

“…Kramers-Kronig analysis was again used to determine the optical permittivities between 0.02 and 6.2 eV (Karlsson) and 0.5 and 6 eV (Rivory). Szczyrbowski et al [10] and Valkonen et al [12] determined the optical constants of sputtered TiN x films in the visible and near infrared spectral regions from measurements of transmission, reflectance and film thickness (d < 31 nm). Pascual et al [11] deposited opaque TiN x films by plasma-assisted chemical vapour deposition (PACVD) and determined its dielectric function by means of spectroscopic ellipsometry in the UV-visible range.…”

Section: Introductionmentioning

confidence: 99%

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Surface plasmon-polariton study of the optical dielectric function of titanium nitride

Hibbins

Sambles

Lawrence

1998

Journal of Modern Optics

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This work presents the first detailed study of the optical dielectric function of optically thick TiN x films using grating-coupling of radiation to surface plasmon-polaritons.Angle-dependent reflectivities are obtained in the wavelength range 500-875 nm and by comparison with grating modelling theory, we determine both the imaginary and real parts of the dielectric function. This method provides an alternative to traditional characterisation techniques (e.g. Kramers-Kronig analysis) that may require additional information about film thickness, or the sample's optical properties in other parts of the electromagnetic spectrum. We 1 have fitted the determined dielectric function to a model based on a combination of interband absorptions and free-electron response evaluating both the plasma energy and relaxation time.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Surface plasmon-polariton study of the optical dielectric function of titanium nitride

Hibbins

Sambles

Lawrence

1998

Journal of Modern Optics

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Nb-doped ZrxSn1−xO2: Experimental and first-principles study

Wang

et al. 2021

Journal of Applied Physics

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Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Zr successfully widened the optical bandgap of SnO2 up to 4.70 from 4.28 eV. Interestingly, although Nb is a common n-type dopant for SnO2, the conductivity of Nb:ZrxSn1−xO2 decreased with increasing Zr content. The greater activation energy Ea of the films with more Zr contents was determined by variable resistance measurements and rationalized by the first-principles calculations. The higher Zr content leads to a lower conductivity in the films. This is because the electronegativity of Zr is smaller than that of Sn and Nb, making it easier for O to attract electrons from Zr and Nb donating less electrons with increasing Zr content. It leads to more electrons filling the Nb 4d orbital and brings the donor level further down from the conduction band minimum. However, Nb:ZrxSn1−xO2 with a low Zr content of x = 0.1 has good electrical conductivity, with a carrier density of 5.426 × 1020 cm−3 and a resistivity of 7.89 × 10−3 Ω cm, and simultaneously a broadened bandgap of 4.4 eV. Therefore, Nb can act as an effective n-type dopant for ZrxSn1−xO2 with proper Zr content, making Nb-doped ZrxSn1−xO2 promising for developing ultraviolet-transparent conductive electrodes.

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Optical And Electrical Properties Of D.C. Sputtered Sn 1-x Zr x O 2 Films

Cited by 2 publications

References 0 publications

Surface plasmon-polariton study of the optical dielectric function of titanium nitride

Surface plasmon-polariton study of the optical dielectric function of titanium nitride

Nb-doped ZrxSn1−xO2: Experimental and first-principles study

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