2021
DOI: 10.1063/5.0049412
|View full text |Cite
|
Sign up to set email alerts
|

Nb-doped ZrxSn1−xO2: Experimental and first-principles study

Abstract: Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Zr successfully widened the optical bandgap of SnO2 up to 4.70 from 4.28 eV. Interestingly, although Nb is a common n-type dopant for SnO2, the conductivity of Nb:Zrx… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 51 publications
0
1
0
Order By: Relevance
“…At present, Zr:SnO 2 alloy thin films prepared by spray pyrolysis, chemical vapor deposition and Nb:Zr x Sn 1− x O 2 alloy films prepared by pulsed laser deposition have been reported in the experiment. 27–29 The preparation temperatures are 150–200, 400, and 720 °C, respectively. This indicates that Zr x Sn 1− x O 2 alloys are very promising to be prepared experimentally.…”
Section: Resultsmentioning
confidence: 99%
“…At present, Zr:SnO 2 alloy thin films prepared by spray pyrolysis, chemical vapor deposition and Nb:Zr x Sn 1− x O 2 alloy films prepared by pulsed laser deposition have been reported in the experiment. 27–29 The preparation temperatures are 150–200, 400, and 720 °C, respectively. This indicates that Zr x Sn 1− x O 2 alloys are very promising to be prepared experimentally.…”
Section: Resultsmentioning
confidence: 99%