Optical and electrical properties of V2O5 nanorod films grown using an electron beam

Highly intense room-temperature photoluminescence in V2O5 nanospheres

“…21,22 Another PL peak centered at $710 nm (1.74 eV) is attributed to mid-gap states ($1.84 eV) formed by oxygen defects that occurred during growth. 9,10 The nanospheres show an intense UV PL peak centered at $396 nm (3.13 eV), which has not been reported previously. This peak is considered to be due to strong UV absorption resulting from the large amount of V 4+ oxidation states in the nanospheres (Fig.…”

“…2(a) shows the XRD pattern of the nanospheres, where there is a diffraction peak corresponding to the (001) plane of a-V 2 O 5 at 20.3 (JCPDS 01-077-2418). [8][9][10] Additional peaks corresponding to the (200), (101), (110), and (301) planes are also observed. This result indicates that the nanosphere has polycrystalline structure.…”

“…The reported V 2 O 5 nanostructures show a weak and broad emission centred at $530 nm (2.34 eV) due to the band edge transition and centred at $710 nm (1.74 eV), which is attributed to mid-gap states ($1.84 eV) formed by oxygen defects that occurred during growth. [8][9][10] This result may be due to their growth structure. Most nanoparticles and nanorods are attached to each other, and their growth length is also short.…”

ppb level detection of NO2 using a WO3 thin film-based sensor: material optimization, device fabrication and packaging

“…Films of lesser thickness have some minor cracks on the surface that provide direct conduits for gas molecules to ow inside the lm; this may inuence the sensor performance. 35 The WO 3 lm of thickness $85 nm has a smaller grain size and higher surface roughness, as conrmed by the AFM analysis of the lm grain size, as well as the surface roughness data, as shown in Fig. 2.…”

INFLUENCE OF ANNEALING DURATION ON THE GROWTH OF V2O5 NANORODS SYNTHESIZED BY SPRAY PYROLYSIS TECHNIQUE

“…For example, Wang et al studied thermal oxidation technique to form V 2 O 5 NRs at low substrate temperatures 18 Kang and co-workers reported the formation of V 2 O 5 NRs by using electron beam irradiation technique. 19 Similarly, RF magnetron sputtering technique has also been used to synthesize V 2 O 5 thin¯lm on silicon substrates. 20 Yan et al 21 fabricated V 2 O 5 NRs based gas sensors on porous silicon (PS) substrates at room temperature by using magnetron sputtering technique.…”