Optical and electrical properties of plasma-oxidation derived HfO 2 gate dielectric films

He, Guanghu; Zhu, Liqiang; Liu, M.; Fang, Q.; Zhang, L.D.

doi:10.1016/j.apsusc.2006.07.055

Cited by 112 publications

(50 citation statements)

References 26 publications

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“…The 550°C annealed HfO x film reveals multiple diffraction peaks, indicating that the film is polycrystalline. The results are consistent with the studies [13,14] that the major crystallization for HfO x film occurs as the annealing temperature is over 500°C. Figure 1b provides the SEM surface images for as-deposited and 550°C annealed HfO x films.…”

Section: Methodssupporting

confidence: 94%

The effect of annealing temperature on resistive switching behaviors of HfOx film

Guo

Tan

Liu

2015

J Mater Sci: Mater Electron

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The HfO x films annealed at different temperatures were fabricated. The crystal structure and chemical composition of the films showed strong dependence on annealing temperature. The prepared samples all exhibited bipolar resistive switching (RS) behavior. The results showed that the RS behaviors of HfO x sample in terms of ON/OFF ratio and endurance property can be improved by low temperature annealing process, while the ON/OFF ratio would be greatly reduced by high temperature annealing process due to the increase of leakage current. The 200°C annealed sample showed good RS performance. The two resistance states can be easily distinguished in a range of 10 3 over 100 switch cycles. The RS mechanisms of prepared HfO x films were studied and interpreted based on space-charge-limited current effect.

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Section: Methodssupporting

confidence: 94%

The effect of annealing temperature on resistive switching behaviors of HfOx film

Guo

Tan

Liu

2015

J Mater Sci: Mater Electron

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“…7. Since the value of n at the wavelength of 632.8 nm is found to be 2.01 which is very close to the value of bulk HfO 2 (n ¼ 2.11), 43 this implies that the grown HfO 2 film has a compact structure.…”

Section: Resultsmentioning

confidence: 83%

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Cantaş

Aygün

Basa

2014

Journal of Applied Physics

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We have investigated the reduction of unwanted interfacial SiO 2 layer at HfO 2 /Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO 2 thin films for possible direct contact between HfO 2 thin film and Si substrate, necessary for the future generation devices based on high-j HfO 2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO 2 thin films and also to undertake the in-situ characterization of the high-j HfO 2 thin films deposited on n-type h100i crystalline silicon substrate. The formation of the unwanted interfacial SiO 2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO 2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-j HfO 2 thin films are crystalline although they were deposited at room temperature. V C 2014 AIP Publishing LLC.

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“…Recently, HfO 2 has been proposed as a replacement since it has a large bandgap (E g > 5 eV) as well as high dielectric value of ∼25 and thermodynamically stable when grown on Si [3,4]. Moreover, having high refractive index value and good transmission characteristics in the visible spectrum range, HfO 2 has been of interest for antireflective multilayer coating technology [5,6].…”

Section: Introductionmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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Optical and electrical properties of plasma-oxidation derived HfO 2 gate dielectric films

Cited by 112 publications

References 26 publications

The effect of annealing temperature on resistive switching behaviors of HfOx film

The effect of annealing temperature on resistive switching behaviors of HfOx film

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

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