2021
DOI: 10.1016/j.optmat.2021.111369
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Optical and electrical properties of NiO and Cu-doped NiO thin films synthesized by spray pyrolysis

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Cited by 66 publications
(11 citation statements)
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“…This can be due to the film crystallization, decreased defects of the films, and the increase of the crystallite sizes with the thermal treatments. Similar results have been reported in literature [ 1 , 10 , 40 ]. The decrease of the optical band gap and the shifting of the absorption edge to the higher wavelength with increasing annealing temperatures is reported for sol-gel NiO films [ 57 ].…”
Section: Resultssupporting
confidence: 93%
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“…This can be due to the film crystallization, decreased defects of the films, and the increase of the crystallite sizes with the thermal treatments. Similar results have been reported in literature [ 1 , 10 , 40 ]. The decrease of the optical band gap and the shifting of the absorption edge to the higher wavelength with increasing annealing temperatures is reported for sol-gel NiO films [ 57 ].…”
Section: Resultssupporting
confidence: 93%
“…Figure 4 also manifests that the absorption edge of NiO x films is dependent on the thermal treatments, and it is red shifted. The optical band gap of sol-gel NiO x films is determined by Tuac’s plot, assuming direct transitions [ 1 ], namely the linear part of the (αhν) 2 curve is extrapolated toward the energy axis at (αhν) 2 = 0. The determined band gap values of NiO x films are in Figure 5 as a function of the annealing temperatures.…”
Section: Resultsmentioning
confidence: 99%
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“…where hv is the photon energy, α is the absorption coefficient i.e., α = 2.303A t , and β is the band edge. The n value can be 2 or 0.5 for a direct or indirect transition, respectively [46]. The values for the optical band gaps were found to be 1.…”
Section: Absorbance Studiesmentioning
confidence: 93%
“…the band edge. The n value can be 2 or 0.5 for a direct or indirect transition, respectively [46]. The values for the optical band gaps were found to be 1.34, 1.38, 2.14, and 2.20 eV for Cu31S16 (120 °C), (b) Cu31S16 (150 °C), (c) Cu7S4 (220 °C), and (d) Cu7S4 (250 °C), respectively (inserts).…”
Section: Absorbance Studiesmentioning
confidence: 99%