Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

Ivanova, T.; Harizanova, A.; Shipochka, Мaria; Vitanov, P.

doi:10.3390/ma15051742

Cited by 22 publications

(18 citation statements)

References 68 publications

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“…Partial dehydration of NiAc 2 gives Ni hydroxides and acetates (1−x) Ni(CH 3 COO) 2 ·×Ni(OH) 2 as an intermediate product [ 68 , 69 , 70 ]. It should be noted that the soft bake at 200 °C does not lead to the creation of metal oxides that could interact and create new phases.…”

Section: Resultsmentioning

confidence: 99%

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

et al. 2023

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Conductive LaNiO3 (LNO) films with an ABO3 perovskite structure deposited on silicon wafers are a promising material for various electronics applications. The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate. Here, we report the formation of columnar grain structure in LNO films deposited on the Si-SiO2 substrate via layer-by-layer deposition with the control of soft-baking temperature and high temperature annealing time of each deposited layer. The columnar structure is controlled not by typical heterogeneous nucleation on the film/substrate interface, but by the crystallites’ coalescence during the successive layers’ deposition and annealing. The columnar structure of LNO film provides the low resistivity value ρ~700 µOhm·cm and is well suited to lead zirconate-titanate (PZT) film growth with perfect crystalline structure and ferroelectric performance. These results extend the understanding of columnar grain growth via CSD techniques and may enable the development of new materials and devices for distinct applications.

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Section: Resultsmentioning

confidence: 99%

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

et al. 2023

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“…It is worth mentioning that several authors have reported the resistivity values of the NiO x and doped NiO x films in the range of 10 −1 to 10 −3 Ωcm after post-deposition annealing in the temperature range of 400-600 °C (Tyagi et al, 2013;Menchini et al, 2013;Jlassi et al, 2014;Ivanova et al, 2022;Wu and Yang, 2013). The specific values largely depended on the employed deposition methods and the annealing ambient conditions (Jlassi et al, 2014;Pan et al, 2019;Ivanova et al, 2022). A common peculiarity for most of the previous studies is that the as-grown NiO x films were always amorphous and/or exhibited very low crystallinity, independent of the method employed for the film synthesis.…”

Section: Electrical Properties Of Li:nio X Thin Filmmentioning

confidence: 99%

Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical properties

Oluwabi

Spalatu²,

Maticiuc³

et al. 2023

Front. Mater.

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The deposition of nickel oxide (NiOx) thin film from an acetylacetonate source using many solution-based techniques has been avoided owing to its poor solubility in alcohol solvents. From this perspective, this work provides a systematic investigation of the development of NiOx thin film, using a combinative approach of ultrasonic spray pyrolysis (USP) and Li dopant for the synthesis and optimization of structural and optoelectronic properties of the films. An in-depth comparative analysis of nickel acetylacetonate-based precursor, employing acetonitrile and methanol as solvents, is provided. It is demonstrated that USP from acetylacetonate precursor yielded uniform, well-compact, and transparent films, with polycrystalline cubic NiOx crystal structures. By screening the deposition temperature in the range of 300–450°C, a temperature of 400°C was identified as an optimal processing temperature leading to uniform, compact, highly transparent, and p-type conductive films. At optimized deposition conditions (400°C), lithium-doped NiOx (Li:NiOx) thin film was deposited. The shift of the main (200) XRD peak position from 43.48° (0-Li:NiOx) to 43.56° (60-Li:NiOx) indicated Li incorporation into the NiOx lattice. An X-ray photoelectron spectroscopy (XPS) study was employed to unravel the incorporation of Li into the deposited Li:NiOx thin films. With the deconvolution of the Ni 2p core level for the as-deposited (0, 60)-Li:NiOx films, the intensity of Ni3+ related peak was found to increase slightly with Li doping. Furthermore, all the deposited Li:NiOx thin films showed p-type conductivity behavior, and the resistivity was reduced from 104 Ωcm (0-Li:NiOx) to 102 Ωcm (60-Li:NiOx). Based on these results, the deposited NiOx and Li:NiOx thin films suggested that USP-deposited Li:NiOx is highly suitable for application in inverted structure solar cells as the hole transport layer.

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“…NiO x thin films have also been successfully applied as hole transporting layers (HTLs) in organic and perovskite solar cells [ 6 , 7 , 8 , 9 , 10 ], and in inorganic and perovskite light-emitting diodes (LEDs) [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Various methods can be used to prepare NiO thin films, such as RF and DC magnetron sputtering [ 4 , 19 , 20 ], electron-beam evaporation [ 21 ], pulsed laser deposition [ 22 , 23 ], atomic layer deposition [ 24 ], metal-organic chemical vapor deposition [ 25 ], chemical bath deposition [ 26 ], spin coating [ 27 ], sol-gel process [ 28 ], SILAR [ 29 ], and Spray Pyrolysis (SP) [ 30 , 31 ]. Among all these methods, the SP technique has the advantage of being easy and economical because it does not need high vacuum equipment and offers the possibility for large area deposition.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Li-Doped NiO Thin Films by Ultrasonic Spray Pyrolysis and Its Application in Light-Emitting Diodes

et al. 2023

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The fabrication of NiO films by different routes is important to extend and improve their applications as hole-transporting layers in organic and inorganic optoelectronic devices. Here, an automated ultrasonic pyrolysis spray method was used to fabricate NiO and Li-doped NiO thin films using nickel acetylacetonate and lithium acetate dihydrate as metal precursor and dimethylformamide as solvent. The effect of the amount of lithium in the precursor solution on the structural, morphological, optical, and electrical properties were studied. XRD results reveal that all the samples are polycrystalline with cubic structure and crystallite sizes in the range of 21 to 25 nm, without any clear trend with the Li doping level. AFM analysis shows that the crystallites form round-shaped aggregates and all the films have low roughness. The optical transmittance of the films reaches values of 60% to 77% with tendency upward as Li content is increased. The electrical study shows that the films are p-type, with the carrier concentration, resistivity, and carrier mobility depending on the lithium doping. NiO:Li (10%) films were successfully incorporated into inorganic light emitting diodes together with Mn-doped ZnS and ZnO:Al films, all deposited on ITO by the same ultrasonic spray pyrolysis technique.

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Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

Cited by 22 publications

References 68 publications

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical properties

Fabrication of Li-Doped NiO Thin Films by Ultrasonic Spray Pyrolysis and Its Application in Light-Emitting Diodes

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