Optical and Electrical Properties of Transition Metal Dichalcogenides (Monolayer and Bulk)

Diebold, Alain C.; Hofmann, Tino

doi:10.1007/978-3-030-80323-0_8

Cited by 2 publications

(2 citation statements)

References 64 publications

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“…20,21 The various interesting properties 2D TMDs ranging from semiconductor (i.e., MoS 2 and WS 2 ), to semimetals (i.e., WTe 2 and TiSe 2 ) and true metals (i.e., NbS 2 and VSe 2 ) and finally to superconductors are based on their layer thickness composition. 22,23 TMDs certainly have structure defects formed from the synthesis process. The defects are small which may range from nanometer to single dimension, but they can modify the electronic band structures and form a quantum-confined situation.…”

Section: Introductionmentioning

confidence: 99%

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Progress and development on the synthesis and application of two-dimensional molybdenum disulphide

Getaneh,

Temam,

Nwanya

et al. 2024

Materials Science and Technology

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Two-dimensional (2D) molybdenum disulphide (MoS2) stands out with its unique tunable bandgap and optoelectronic properties, making it a prime focus in transition metal dichalcogenides (TMDs) research. It has wide-ranging applications in energy storage, electronics, optoelectronics and high-performance sensing materials. Synthesis methods fall into top-down (chemical, mechanical and liquid-phase exfoliation) and bottom-up (physical vapour deposition, chemical layer deposition, atomic layer deposition and solvothermal/hydrothermal) categories. Choosing the right synthesis method is pivotal as it significantly impacts the material's properties and application potential. 2D MoS2, owing to its natural abundance, adaptability, adjustable bandgap and high surface-to-volume ratio, finds utility in various domains like energy storage, catalysis, composite and sensors. This review delves into recent progress, challenges and future prospects in 2D MoS2 synthesis and applications.

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Section: Introductionmentioning

confidence: 99%

“…20,21 The various interesting properties 2D TMDs ranging from semiconductor (i.e., MoS 2 and WS 2 ), to semi-metals (i.e., WTe 2 and TiSe 2 ) and true metals (i.e., NbS 2 and VSe 2 ) and finally to superconductors are based on their layer thickness composition. 22,23…”

Section: Introductionmentioning

confidence: 99%

Progress and development on the synthesis and application of two-dimensional molybdenum disulphide

Getaneh,

Temam,

Nwanya

et al. 2024

Materials Science and Technology

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2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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Optical and Electrical Properties of Transition Metal Dichalcogenides (Monolayer and Bulk)

Cited by 2 publications

References 64 publications

Progress and development on the synthesis and application of two-dimensional molybdenum disulphide

Progress and development on the synthesis and application of two-dimensional molybdenum disulphide

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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