2009
DOI: 10.1016/j.jcrysgro.2008.11.060
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Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques

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Cited by 17 publications
(7 citation statements)
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“…This value is in the reported proximity of 3.3-3.75 eV. 14,22,23 3.4 Hall effect measurement at low temperature As well as the high infrared transparency, CSO lm on a-plane sapphire substrate exhibits good electric conductive characteristic. The temperature dependences of the electrical resistivity, carrier concentration, and Hall mobility of the lm were measured between 90 and 300 K, as shown in Fig.…”
Section: Optical Measurements Of the Lmsupporting
confidence: 54%
See 1 more Smart Citation
“…This value is in the reported proximity of 3.3-3.75 eV. 14,22,23 3.4 Hall effect measurement at low temperature As well as the high infrared transparency, CSO lm on a-plane sapphire substrate exhibits good electric conductive characteristic. The temperature dependences of the electrical resistivity, carrier concentration, and Hall mobility of the lm were measured between 90 and 300 K, as shown in Fig.…”
Section: Optical Measurements Of the Lmsupporting
confidence: 54%
“…The temperature dependence of the electrical transport properties of the lm exhibited similar semiconducting characteristics as those of the CSO[3R](0001) epitaxial lm. 22,24 The increase in the carrier concentration and the decrease in the Hall mobility and electrical resistivity of the lm were observed with increasing temperature. The Hall coefficient of the CSO lm is +5.57 cm 3 C À1 at room temperature, indicating p-type conduction characteristic.…”
Section: Optical Measurements Of the Lmmentioning
confidence: 94%
“…Cu-based delafossites have attracted attention due to their expected large hole mobility, a result of the mixing of Cu 3d and O 2p states forming the valence band. It has been reported that this delafossite structure allows the hosting of a multitude of M cations, namely p-block elements (Al [49,103,104], B [105][106][107], Ga [54,108,109] or In [110][111][112][113]), transition metals (Co [114,115], Cr [82,116,117], Fe [118][119][120], Mn [121,122], Rh [123], Sc [124][125][126] and Y [89,[126][127][128]), or lanthanides (La [129][130][131], Nd [132], Pr [133], Sm and Eu [134]). These materials were thoroughly investigated as they demonstrated interesting properties in the different fields: antibacterial [135,136], batteries [137], (photo)catalyse [83,131,[138][139][140], lumine...…”
Section: Graphical Abstract Introductionmentioning
confidence: 99%
“…Thus far, several Cu-base delafossites have been reported such as CuFeO 2 [11], CuGaO 2 [12], CuInO 2 [13], CuScO 2 [14], CuCrO 2 [15][16][17] and Mg-doped CuCrO 2 and so on [18][19][20][21][22]. As we all known, most delafossite films were prepared by pulsed laser deposition (PLD) [23], sputtering [24], electron beam evaporation [25] and chemical vapor deposition (CVD) [26,27] and so on.…”
Section: Introductionmentioning
confidence: 99%