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Zinc stannate (Zn2SnO4) thin films were deposited by RF magnetron sputtering on silica substrates at various [O2/(Ar+O2)] flow ratios. The influences of the [O2/(Ar+O2)] flow ratio on the crystalline structure, and the optical and electrical properties have been investigated. No sharp X-ray diffraction (XRD) peaks were observed in as-deposited thin films. After postdeposition annealing in air at 750°C, the thin films showed a preferred orientation of (111). The thin films exhibited a high transmittance in the visible spectrum irrespective of the [O2/(Ar+O2)] flow ratio or postdeposition annealing. The optical band gap was estimated to be 4.1 eV by analyzing the optical spectra of thin films annealed at 750°C. The composition ratio of Zn/Sn for thin films deposited in an Ar/O2 mixture was 2.0 and their electrical resistivity was on the order of 105 Ω·cm. In contrast, the composition ratio of Zn/Sn for a thin film deposited in pure Ar was 1.5 and an electrical resistivity of 4.1 ×10-2 Ω·cm was observed.

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An epitaxial film of CuScO2, a transparent oxide semiconductor with a delafossite structure, was grown on an α−Al2O3(112¯0) substrate by a pulsed laser deposition method using a single-phase Cu2Sc2Oδ target. A two-dimensional x-ray reciprocal space mapping measurement revealed that the film was single phase with a rhombohedral crystal structure. The film showed six-fold rotational symmetry in the basal plane, indicating that the film had a twinned domain structure. The epitaxial growth of CuScO2[3R](0001) thin films on α−Al2O3(112¯0) substrates is caused by the uniaxial locked epitaxy mechanism along the ⟨1¯21¯0⟩ direction of the film, and the orientation relationships of the film with respect to the substrate were CuScO2[3R](0001)∕∕α−Al2O3(112¯0) and CuScO2[3R][1¯21¯0]∕∕α−Al2O3[88¯01]. The optical transmittance of the film was larger than 65% in the visible/near-infrared regions, while the energy gap for direct allowed transition was estimated as 3.7 eV. The resistivity of the film, 9.3×106Ωcm at room temperature, significantly decreased to 4.0 Ωcm after both substituting Mg2+ ions for Sc3+ and intercalating excess oxygen. The Mg-doped CuScO2+X(0001) thin film showed optical transmittance of larger than 65% in the visible region, and the Seebeck coefficient was positive, indicating a p-type conductivity.

Our results suggest possible roles of chemokines/chemokine receptors on placental physiology and their involvement in HIV transmission as alternative receptors.

Recently, possible involvement of Helicobacter pylori (H. pylori) in hyperemesis gravidarum have been reported based on serological studies and the therapeutic effects of antibiotics. In this study, we examined for the presence of H. pylori genome [by (PCR) of saliva] in combination with serological techniques. Thirty-four patients with hyperemesis and 29 normal pregnant subjects were examined for serum anti-H. pylori IgG antibodies and PCR of saliva. By serum antibody test, 16 of 34 hyperemesis patients (47.5%) were positive for anti-H. pylori IgG antibody, while 6 of 29 control subjects (20.6%) were positive (chi2 p < 0.0005). PCR revealed positive H. pylori genome in 21 cases out of 34 hyperemesis (61.8%, 14 of 16 patients positive for H. pylori antibody and 7 of H. pylori-antibody-negative 18 patients) and 8 of 29 control subjects (27.6%) (chi2 p < 0.000001). We suggest chronic infection of H. pylori as one of the important factors on the pathogenesis of hyperemesis gravidarum even though it may not be the single cause of the disorder.

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