2011
DOI: 10.1142/s0217979211058614
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OPTICAL AND ELECTRICAL PROPERTIES OF SnO2 THIN FILM PREPARED USING RTO METHOD

Abstract: Transparent and conducting SnO 2 thin film has been produced on quartz substrate using rapid thermal oxidation of pure Sn in air at different oxidation temperature and oxidation time. The transmittance T in the visible and NIR was investigated, the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600° and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150… Show more

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Cited by 43 publications
(13 citation statements)
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“…This may be due to the increasing of grain size and decreasing thickness. Similar result was also recorded in other work [28]. The values of transmission were about 70-80% with the annealing temperature range of 100 to 600 o C. The deposited samples were white to brown in color and showed high transmittance.…”
Section: Optical Propertiessupporting
confidence: 90%
“…This may be due to the increasing of grain size and decreasing thickness. Similar result was also recorded in other work [28]. The values of transmission were about 70-80% with the annealing temperature range of 100 to 600 o C. The deposited samples were white to brown in color and showed high transmittance.…”
Section: Optical Propertiessupporting
confidence: 90%
“…Figure (8) show the conductivity of thin films was changed with the change in Ar gas pressures. The figure reveals that the conductivity of CdS films increase with increasing of deposition pressure and such eternal normally due to the increasing in grain sizes.…”
Section: Samplesmentioning
confidence: 99%
“…Theoretically, the link between the forward bias V and the current flow via the Schottky barrier junction in thermionic emission [8,25]:…”
Section: Samplesmentioning
confidence: 99%
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