Optical and electrical characterizations of SnSe, SnS2 and SnSe2 single crystals

Julien, C.; Eddrief, M.; Samaras, I.; Bałkanski, M.

doi:10.1016/0921-5107(92)90033-6

Cited by 102 publications

(63 citation statements)

References 9 publications

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“…• Finally, the values V L and V S leading to the best agreement between the calculated and the experimental V D values are selected to calculate especiallyYoung's modulus for the layer materials from the relation (2). The results are given in Table 6.…”

Section: Exploitation Of the Acoustic Signature V (Z)mentioning

confidence: 99%

Study of the elastic properties of sprayed SnO₂ and SnS₂ layers

Mnari¹,

Cros²,

Amlouk³

et al. 2000

Can. J. Phys.

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SnO 2 and SnS 2 thin films have been prepared by the spray pyrolysis technique for photovoltaic application purposes and characterized by high-frequency acoustic microscopy (570 MHz). The surface acoustic images reveal contrasts explained by differences in topography according to atomic force microscopy studies. The acoustic signature V (z) of the systems layer/substrate were modelled and refined to fit with the experimental V (z). The acoustic parameters of the layers were calculated using the results of the final simulation. The values of Young's modulus deduced from the acoustic parameters, 401 and 56 GPa for SnO 2 and SnS 2 , respectively, are discussed in relation with the chemical structure and bonding involved.PACS Nos.: 43.35Ns and 62.65Résumé : Utilisant la technique d'évaporation par pyrolise, nous préparons des films minces de SnO 2 et de SnS 2 pour des applications photovoltaïques et nous en déterminons les caractéristiques par microscopie acoustique à haute fréquence (570 MHz). Les images acoustiques de surface révèlent des contrastes que la microscopie à force atomique décrit comme étant des différences topographiques. Nous avons modélisé et raffiné la signature acoustique, V (z), de l'interface couche-substrat pour obtenir un meilleur accord avec la valeur expérimentale de V (z). Les paramètres acoustiques de la couche ont été calculés en utilisant les résultats de la simulation finale. Nous déterminons la valeur du module de Young pour le SnO 2 et le SnS 2 , respectivement 401 et 56 GPa et nous en analysons la relation avec la structure et les liaisons chimiques impliquées.

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Section: Exploitation Of the Acoustic Signature V (Z)mentioning

confidence: 99%

Study of the elastic properties of sprayed SnO₂ and SnS₂ layers

Mnari¹,

Cros²,

Amlouk³

et al. 2000

Can. J. Phys.

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“…A slight increase in ptype carrier density at room temperature compared with 70 K was observed in SnSe. 23 The origin of the p-type extrinsic carrier in the crystal is due primarily to the presence of ionized lattice defects associated with deviations from nominal stoichiometry, possibly due to excess of selenium or vacancies occupied by acceptor impurities.…”

Section: A Hall-effect Studiesmentioning

confidence: 99%

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

et al. 2014

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Optical and Hall-effect measurements have been performed on single crystals of Pb0.77Sn0.23Se, a IV-VI mixed chalcogenide. The temperature dependent (10-300 K) reflectance was measured over 40-7000 cm −1 (5-870 meV) with an extension to 15,500 cm −1 (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via KramersKronig analysis as well as by a Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the lowenergy optical spectra. It is found that the valence-conduction band transition energy as well as the free-carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density functional theory calculation for the electronic band structure are also presented.

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“…16 Moreover, selenium doping in SnS 2 offers a useful route for bandgap engineering, in that the band gap of SnS 2Àx Se x can be continuously tuned from 2.1 eV (SnS 2 ) to 1.0 eV (SnSe 2 ) by varying the selenium content. 17 This would provide an important versatility in low-power electronic and optoelectronic devices. For example, the bandgap of SnSe 2 is very close to that of silicon (1.1 eV), and was reported to have higher carrier mobility than SnS 2 in bulk form.…”

mentioning

confidence: 99%

“…These values are in good agreement with experiments. 17 Since the bottom of conduction band is at M-L (U-symmetry line), we focus on the isoenergy surfaces around the M and L points in k-space, as well as and along the U-line. The isoenergy surfaces in SnS 2 are found to be cylindrical, with axes along the U-line.…”

mentioning

confidence: 99%

Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

Pan

Manongdo

et al. 2013

Applied Physics Letters

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A thorough characterization of field effect transistors with conduction channels made of SnS2−xSex nanocrystals having different selenium content is presented. The main effect of increasing the selenium content is a suppression of the drain-source current modulation by the gate voltage. The temperature dependence of SnS2−xSex conductivity for all compositions is characterized by an activation energy that gradually decreases with x. A simple donor model, with parameters of SnS2 and SnSe2 deduced from density functional theory, suggests that the change in the activation energy is mostly due to enhanced dielectric constants that accompany the band gap reduction in SnS2−xSex.

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Optical and electrical characterizations of SnSe, SnS2 and SnSe2 single crystals

Cited by 102 publications

References 9 publications

Study of the elastic properties of sprayed SnO₂ and SnS₂ layers

Study of the elastic properties of sprayed SnO₂ and SnS₂ layers

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

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Optical and electrical characterizations of SnSe, SnS2 and SnSe2 single crystals

Cited by 102 publications

References 9 publications

Study of the elastic properties of sprayed SnO2 and SnS2 layers

Study of the elastic properties of sprayed SnO2 and SnS2 layers

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

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Product

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Study of the elastic properties of sprayed SnO₂ and SnS₂ layers

Study of the elastic properties of sprayed SnO₂ and SnS₂ layers