We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS 2 ) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS 2 FET, the mobility is ~17 cm 2 V −1 s −1 and the on/off current ratio is ~10 8 , which are much higher than those of FETs based on CVD polycrystalline MoS 2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS 2 atomic layers deposited directly on SiO 2 is comparable to the best exfoliated MoS 2 flakes. It shows that CVD is a viable method to synthesize high quality MoS 2 atomic layers.
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.
A thorough characterization of field effect transistors with conduction channels made of SnS2−xSex nanocrystals having different selenium content is presented. The main effect of increasing the selenium content is a suppression of the drain-source current modulation by the gate voltage. The temperature dependence of SnS2−xSex conductivity for all compositions is characterized by an activation energy that gradually decreases with x. A simple donor model, with parameters of SnS2 and SnSe2 deduced from density functional theory, suggests that the change in the activation energy is mostly due to enhanced dielectric constants that accompany the band gap reduction in SnS2−xSex.
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