Optical and electrical characterization of SiO₂ films obtained by atmospheric pressure chemical vapor deposition

Abstract

SiO 2 films by atmospheric pressure chemical vapor deposition (APCVD) process, using tetraethoxysilane (TEOS) and ozone (O 3 ) as reactant were obtained. The films were deposited on silicon substrates at various temperatures 125, 150, 175, 200, 225 and 250 °C Fourier transforms infrared (FTIR) spectroscopy was used to characterize the SiO 2 films. Absorbance spectrums show the vibration modes corresponding to SiO 2 films. Additional absorption bands due to residual groups were also observed, but they were found to be dependent on the deposition temperature. The observed current flowing through the oxide could be related to these residual groups, mainly to hydroxyl groups.

Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

“…FTIR spectra shows the three characteristic peaks of Si-O-Si of thermally grown films at various temperatures and found good matching with reported works [7 -9]. With this we can say that the quantity of residual groups can be reduced by increasing deposition temperature [10]. a b Fig.…”

Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates

“…Those of the intermediate (INT) were set equal to the parameters of TEOS. The molecular weight of INT was fixed at 180.27 g mol −1 by matching it to triethoxysilanol, ((Si(OH)(OC 2 H 5 ) 3 ), one of the most probable intermediate species as reported by many authors (Kawahara et al, 1992;Romet et al, 2001;Flores and Crowell, 2005;Coltrin et al, 2000). All physical properties of the by-product produced by the INT were set equal to the latter.…”

“…The TEOS/O 3 route is therefore promising to treat complex-in-shape thermally sensitive substrates for innovative applications. Succeeding in conformally coating complex substrates at low temperatures depends strongly on O 3 concentration (Shareef, 1995;Kawahara et al, 1992). The radicals produced by this chemistry are unstable, while the gas phase reactions are strongly dependent on temperature and radical species concentration (Shareef, 1996).…”

“…Zhou et al (1997) developed a new model based on the two previous ones for a Watkins Johnson reactor operating at atmospheric pressure between 500 and 550 • C. The main differences concern the assumption that TEOS must react with O 3 to form, in one hand, the INT species and gaseous unreactive molecules noted R, and on the other hand the SiO 2 film. The unreactive molecules R mentioned in the literature are CH 3 CHO, EtOH, MeOH (Kawahara et al, 1992;Flores and Crowell, 2005;Arnó, 1999), while other authors assume the direct decomposition of such molecules into CO, CO 2 and H 2 O (Dobkin et al, 1995;Zhou et al, 1997). Nieto et al (2005) applied this model to the same type of reactor and adapted some kinetic constants to its specific chamber configuration.…”

Study of Mis Multicrysraline Silicon Thin-Film Solar Cell

“…The Metal-Insulator-Semiconductor (MIS) structure is currently receiving attention in solar cell research [1][2][3][4][5][6][7][8]. It has several advantages over p-n junctions; first, MIS structure considerably simpler to fabricate, thus is reducing the overall cell cost drastically.…”