Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates

Abstract

Large temperature range model for theatmospheric pressure chemical vapor deposition ofsilicon dioxide films on thermosensitive substrates. (2020) Chemical Engineering Research and Design, 161. 146-158.

An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine

“…Between 0.1 and 0.3 m, the temperature profile presents a W shape. This emerges as the result of a double vortex trajectory of the gas in the inlet region, which has been explained in more detail elsewhere [27]. This W shape is also observed in the mass fraction profiles.…”

“…rectangles and used as substrates, supported in a vertical array by two home-made, tubular, stainless steel substrate-holders, as illustrated in the photograph in Fig. 1 (b), covering the 5.7-50.0 cm region of the reactor [27]. A total of 18 Si coupons were utilized for each run.…”

“…No samples were placed beyond 50.0 cm. Similar to our previous works [23,27], this configuration was chosen deliberately, since the simultaneous processing of thin films within the nonisothermal and isothermal zones can assist in obtaining complementary mechanistic and kinetic information. Before being inserted into the reactor, the Si substrates were degreased in a succession of three ultrasound bath steps described elsewhere [27].…”

“…The reaction chamber geometry, consisting of the quartz tube, substrate holders and array of substrates, was replicated in a 3D spatial domain as illustrated in Fig. 1 (c) and is described in more detail elsewhere [27]. Only half of the reactor is considered, due to mirroring symmetry along the YZ plane.…”

An innovative GC-MS, NMR and ESR combined, gas-phase investigation during chemical vapor deposition of silicon oxynitrides films from tris(dimethylsilyl)amine

“…The experimental setup has already been presented in previous work. 33 The exit of the reactor setup was slightly modified as illustrated in Figure S1 of Supporting Information, to enable the sampling for the three gas phase analyses. Silicon <100> wafers (Neyco, 24x32 mm 2 ) are used as substrates.…”