Optical and Electrical Characterization of Chemical Defects in GaAs Layers Grown by MBE

Abstract

Careful control of UHV conditions during molecular beam epitaxial growth of thin crystalline gallium arsenide layers has to be accomplished to avoid undesired incorporation of chemical defects. Residual acceptor impurities in the MBE normalGaAs films were detected through their characteristic photoluminescence spectra, and the effect of these compensating acceptor centers on electron mobility in n‐type MBE normalGaAs was analyzed. A useful procedure for an accurate determination of the residual acceptor concentration in MBE normalGaAs is presented.