Optical and electrical characterization of transparent Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution

Abstract

Non‐doped and Ga‐doped ZnO film on glass substrate were successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc‐based solution. The samples had an average optical transmittance of more than 80% and were strongly a‐axis orientated according to the results of optical transmittance and X‐ray diffraction analysis, respectively. The n‐type Ga‐doped ZnO films had a low resistivity of 2.3 × 10–3 Ωcm, a carrier concentration of 1.1 × 1020 cm–3 and a mobility of 10 cm2 (Vs)–1 at an optimal Ga content of 2 at% upon UV irradiation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Effect of Gallium Incorporation on the Properties of ZnO Thin Films

“…[9]. In order to obtain Ga-doped ZnO films, various thin-film production techniques such as magnetron spraying [10][11][12][13], chemical spray pyrolysis [14][15][16][17][18][19][20][21], sol-gel [22][23][24], chemical steam deposition (MOCVD) [25,26], pulsed laser deposition (PLD) [27][28][29] and ion plating with DC arc discharge [30,31] are used.…”

Effect of Gallium Incorporation on the Properties of ZnO Thin Films

“…[9]. In order to obtain Ga-doped ZnO films, various thin-film production techniques such as magnetron sputtering [10][11][12][13], chemical spray pyrolysis [14][15][16][17][18][19][20][21], sol-gel [22][23][24], chemical vapour deposition (MOCVD) [25,26], pulsed laser deposition (PLD) [27][28][29] and ion plating with DC arc discharge [30,31] are used. The chemical spray technique among these techniques is widely used thanks to its advantages in terms of that the films produced have wide surfaces as well as that it is economic and simple.…”