Effect of Gallium Incorporation on the Properties of ZnO Thin Films

Abstract

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

Indium-free GZO thin films prepared using plasma-enhanced atomic layer deposition: toward thin film transistor application

“…Recently, pulsed laser deposition, 26,27 molecular beam epitaxy, 28 metal–organic chemical vapor deposition, 29–31 chemical spray, 32–34 sol–gel methods, 35–37 magnetron sputtering, 38–42 arc plasma evaporation, 43–45 ion plating 46–48 and other methods have been applied for GZO thin film deposition. Owing to the increasing demand for thinner and smaller electronic products, the attention to atomic layer deposition (ALD) technology has also increased as it can precisely control the thickness and deposit films on high-aspect-ratio surfaces.…”