Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

Saji, K. J.; Jayaraj, M. K.; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

doi:10.1149/1.2903866

Cited by 59 publications

(33 citation statements)

References 35 publications

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“…If these TFTs do not show TFT operation or satisfactory performance, thermal annealing can be performed at 300-400 °C in air or under O 2 gas. In this case, it should be noted that the top metal electrodes should be formed after thermal annealing to avoid oxidation [69].…”

Section: Review Articlementioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Review Articlementioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…The radiofrequency (rf) cosputtering of ITO and ZnO at room temperature will lead to an amorphous material. They are sometimes preferred over polycrystalline ones due to its low processing temperature and high uniformity of device characteristics [7].…”

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“…Degenerate band conduction in amorphous oxide semiconductors containing post-transition metal cations (like Zn, Sn or In) will let relatively high mobilities to be achieved [7]. The bottom of the conduction band in these oxide semiconductors, characterized by its electronic configuration (n-1)d 10 ns 0 with n ≥ 4, is composed of spherically symmetric ns orbital with isotropic shapes and direct overlap with next ns orbital is possible [8].…”

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Transparent conducting thin films by co‐sputtering of ZnO‐ITO targets

Carreras

Antony

Roldán

et al. 2010

Phys. Status Solidi (c)

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Transparent and conductive Zn‐In‐Sn‐O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co‐sputtering of ITO and ZnO targets. Co‐sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Consequently, the electrical characteristics of the ZTO films can be controlled by Zr. 4 ]. The Zr:Zn:Sn molar ratio was fixed at 0.3 : 4 : 7.…”

Section: Introductionmentioning

confidence: 99%

Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

Rim¹,

Kim²,

Jeong³

et al. 2011

Current Applied Physics

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Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

Cited by 59 publications

References 35 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Transparent conducting thin films by co‐sputtering of ZnO‐ITO targets

Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

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