Optical amplification at 1534 nm in erbium-doped zirconia waveguides

Schermer, Ross T.; Berglund, W.; Ford, C.; Ramberg, R.; Gopinath, Ashwin

doi:10.1109/jqe.2002.806163

Cited by 26 publications

(15 citation statements)

References 16 publications

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“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

“…Lateral confinement can also be achieved in planar waveguiding films by etching rib or ridge waveguide structures. Etching techniques include Ar-ion beam etching [36,68,128,131,133,201], etching either the substrate [123,125] or over-layer (striploading) [40,87,150,174], reactive ion etching (RIE) [32,59,75,108,109,137,138,145,153,156,169,170,175,176,193], and wet chemical etching [79,129,152,157,166,177]. Of these etching methods, RIE provides the best control and resolution.…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

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Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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“…These include Aluminum Oxide, 1 Zirconium Oxide, 2 Titanium Oxide, 3 Scandium Oxide, 4 and Yttrium Oxide. [5][6][7] Planar waveguide lasers made with rare earth doped thin films are a desirable method to achieve high optical gain in a small and compact device.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

Pearce

Parker

Charlton

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thin films of yttrium oxide, Y2O3, were deposited by reactive sputtering and reactive evaporation to determine their suitability as a host for a rare earth doped planar waveguide upconversion laser. The optical properties, structure, and crystalline phase of the films were found to be dependent on the deposition method and process parameters. X-ray diffraction analysis on the “as-deposited” thin films revealed that the films vary from amorphous to highly crystalline with a small broad peak at 29° corresponding to the ⟨222⟩ reflections of Y2O3. The samples with the polycrystalline structure had a stoichiometry close to bulk cubic Y2O3. Scanning electron microscopy imaging revealed a regular column structure confirming their crystalline nature. The thin film layers which allowed guiding in both visible and infrared regions had lower refractive indices, higher oxygen content, and a more amorphous structure. Higher oxygen pressures during the deposition lead to a more amorphous layer.

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“…In recent years, erbium-doped high index contrast materials have generated great interest [5][6][7][8], and will allow strong confinement of light, ultra compact photonic devices, and non-linear processes at moderate power levels. Tantala (Ta 2 O 5 ) has already been used as a host for rare earth ions [9][10][11], with lasing being achieved only in Nd:Ta 2 O 5 to date [9].…”

Section: Introductionmentioning

confidence: 99%

Waveguiding and photoluminescence in Er3+-doped Ta2O5 planar waveguides

Subramanian

Otón

Wilkinson

et al. 2009

Journal of Luminescence

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The optimization of erbium-doped Ta 2 O 5 thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM~50 nm) centered at 1534 nm, corresponding to 4 I 13/2 -4 I 15/2 transition of Er 3+ ion. The samples were annealed up to 600 ƕ C and, both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.

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Optical amplification at 1534 nm in erbium-doped zirconia waveguides

Cited by 26 publications

References 16 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

Waveguiding and photoluminescence in Er3+-doped Ta2O5 planar waveguides

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