Optical absorption spectra of P-type Tin monoxide thin films around their indirect fundamental gaps determined using photothermal deflection spectroscopy

Toyama, Toshihiko; Seo, Yuichi; Konishi, Toshifumi; Okamoto, H.; Morimoto, Ryohei; Nishikawa, Yasuo; Tsutsumi, Yasuo

doi:10.1016/j.tsf.2013.05.141

Cited by 16 publications

(8 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The band structures of tetragonal SnO and PbO at 0 GPa and selected high pressures were calculated and are presented in Figure 4. SnO is a small bandgap semiconductor at ambient conditions with a measured indirect bandgap reported at approximately 0.7 eV [3,31]; PbO has a larger indirect bandgap at 1.9 eV [32]. Our calculated values of the indirect gap between Γ and M points (SnO: 0.18 eV, PbO: 1.69 V) were underestimated due to the wellknown limitations of the one-electron picture in DFT [33].…”

Section: Pbo Metastable Phase At 0 Gpamentioning

confidence: 64%

“…SnO and PbO are a group IV metal oxide semiconductors, which serve as functional materials in a wide variety of applications. SnO has emerged as a candidate for p-type thin-film transistor as a transparent p-type semiconductor with high hole mobility and a small indirect bandgap (0.7 eV) [1][2][3]. By contrast, PbO is an n-type semiconductor with a wider indirect bandgap (1.9 eV) and with applications that include serving as a photoconductive material in imaging devices and X-ray detectors [4][5][6] as well as an anode in lead-acid and lithium-ion batteries [7,8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-Pressure Phases of SnO and PbO: A Density Functional Theory Combined with an Evolutionary Algorithm Approach

Nguyen

Makov

2021

Materials

View full text Add to dashboard Cite

Tin monoxide, SnO, and its analog, lead monoxide, PbO, have the same tetragonal P4/nmm structure, shaped by nonbonding dispersion forces and lone pairs. The high-pressure phases of SnO and PbO have been explored in several experimental and theoretical studies, with conflicting results. In this study, the high-pressure structures of SnO and PbO are investigated using density functional theory calculations combined with an evolutionary algorithm to identify novel high-pressure phases. We propose that the monoclinic P21/m SnO and orthorhombic Pmmn PbO phases, which are metastable at 0 GPa, are a slight rearrangement of the tetragonal P4/nmm-layered structure. These orthorhombic (and their closely related monoclinic) phases become more favored than the tetragonal phase upon compression. In particular, the transition pressures to the orthorhombic γ-phase Pmn21 of SnO/PbO and the monoclinic phase P21/m of SnO are found to be consistent with experimental studies. Two new high-pressure SnO/PbO polymorphs are predicted: the orthorhombic Pbcm phase of SnO and the monoclinic C2/m of PbO. These phases are stabilized in our calculations when P > 65 GPa and P > 50 GPa, respectively. The weakening of the lone pair localization and elastic instability are the main drivers of pressure-induced phase transitions. Modulations of the SnO/PbO electronic structure due to structural transitions upon compression are also discussed.

show abstract

Section: Pbo Metastable Phase At 0 Gpamentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

High-Pressure Phases of SnO and PbO: A Density Functional Theory Combined with an Evolutionary Algorithm Approach

Nguyen

Makov

2021

Materials

View full text Add to dashboard Cite

show abstract

“…Fabrication of SnO thin films has been extensively evaluated using a series of methods, including physical vapor deposition (PVD) routes, such as PLD, EB, RFMS, and DCMS using Sn, SnO, and SnO 2 targets on both rigid and flexible substrates. The Hall mobility and carrier (hole) concentrations, along with the deposition conditions are listed in Table 3 for relatively recent studies.…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…Liang et al measured a small indirect E g of 0.5 eV by optical absorption from a polycrystalline SnO thin film capped by Al 2 O 3 . Toyama and co‐workers successfully demonstrated the measurement of the indirect E g of SnO from the photoacoustic spectrum and photothermal deflection spectroscopy, with results of 0.7 and 0.6 eV, respectively . Quackenbush et al also studied this indirect E g on SnO thin films using hard‐X‐ray photoelectron spectroscopy (HAXPES) and O K‐edge X‐ray emission/absorption spectroscopy (XES/XAS), where the occupied states (by HAXPES and XES) and unoccupied states (by XAS) could be measured separately.…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

show abstract

“…If the wavelength of the pump light is varied, the deflection of the probe laser becomes a measure of an optical absorption spectrum of the material. The relation between amplitude of PDS signal A and absorption coefficient α is given by [13,14]:…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Derived Cds Nanocrystalline Thin Films: Optical and Photoconduction Properties

Khan

Munirah

Aziz

et al. 2018

Materials Science-Poland

View full text Add to dashboard Cite

High-quality CdS nanocrystalline thin films were grown by sol-gel spin coating method at different solution temperatures on glass substrates. As-deposited films exhibited nanocrystalline phase with hexagonal wurtzite structure and showed good adhesion and smooth surface morphology. It was clearly observed that the crystallinity of the thin films improved with the increase in solution temperature. Crystallites sizes of the films also increased and were found to be in the range of 10 mm to 17 nm. The influence of the growth mechanism on the band and sub-band gap absorption of the films was investigated using UV-Vis and photothermal deflection spectroscopy (PDS). The band gap values were calculated in the range of 2.52 eV to 2.75 eV. The band gap decreased up to 9 % with the increase in solution temperature from 45 °C to 75 °C. Absorption coefficients estimated by PDS signal showed the significant absorption in low photon energy region of 1.5 eV to 2.0 eV. The dark and illuminated I-V characteristics revealed that the films were highly photosensitive. The results demonstrated the potential applications of sol-gel grown CdS nanocrystalline thin films as photoconductors and optical switches.

show abstract

Optical absorption spectra of P-type Tin monoxide thin films around their indirect fundamental gaps determined using photothermal deflection spectroscopy

Cited by 16 publications

References 26 publications

High-Pressure Phases of SnO and PbO: A Density Functional Theory Combined with an Evolutionary Algorithm Approach

High-Pressure Phases of SnO and PbO: A Density Functional Theory Combined with an Evolutionary Algorithm Approach

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Sol-Gel Derived Cds Nanocrystalline Thin Films: Optical and Photoconduction Properties

Contact Info

Product

Resources

About