Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlattices

Arch, D.K.; Wicks, G. W.; Tonaue, Tom; Staudenmann, J.‐L.

doi:10.1063/1.335566

Cited by 24 publications

(11 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The conduction-band (CB) minimum of InAs is lower in energy than the valence-band (VB) maximum of GaSb. It was observed that, in the study of (InAs) 1 . x (GaAs) x -(GaSb) 1 .…”

Section: Introductionmentioning

confidence: 92%

“…It was observed that, in the study of (InAs) 1 . x (GaAs) x -(GaSb) 1 . y (GaAs) y p-n heterojunctions [22], the rectifying characteristic changes to nonrectification as both x and y approach zero, implying the change-over from the "staggered" heterojunction to the -"misaligned" one.…”

Section: Introductionmentioning

confidence: 92%

“…From the results of D. K. Arch et al [1] and G. A. Sai-Halasz et al [21], we can understand that the absorption coefficient of InAs-GaSb superlattice increases sharply at the photon eneigy corresponding to the energy gap, when the period thickness is 40A (d l =d 2 =20k). But the absorption coefficient changing at the photon energy of energy gap is softer when the period thickness is 102A or 124A (di=d 2 ).…”

Section: Introductionmentioning

confidence: 94%

“…As a result, the optical absorption coefficient of InAs-GaSb superlattice is too small in the thick-layer regime where the superlattice band gap corresponds to long infrared wavelength. In fact, for superlattice layer thickness (individual material layer thickness d exceeding 50A) to reach long-wavelength (A, c > 10|Xm) sensitivity, the optical absorption properties of the superlattices are inadequate for infrared detector applications [1]. Therefore, small band gap and large optical matrix elements appear to be two mutually exclusive requirements in InAs-GaSb type II superlattices.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition

Lin

Chen

et al. 1995

Journal of the Chinese Institute of Engineers

View full text Add to dashboard Cite

It was observed that the conduction-band minimum of InAs is lower in energy than the valence-band maximum of GaSb. This will cause the non-rectification characteristic. Such unusual nonrectifying p-n junction is the direct consequence of interpenetration between the GaSb valence band and the InAs conduction band, since the InAs-GaSb superlattices can have a band gap smaller than that of either constituent materials. InAs-GaSb superlattices have the modifiable band gap, but the absorption coefficient shall decrease rapidly when the period thickness is over 100 Å(d 1 =d 2 ). It has a good spectral response in 3-5 µm region, but bad in 8-14 µm. The new proposal offered a normal incidence valence intersubband transition at ~10µm. It is potential to fabricate the long wavelength devices.In this paper, the InAs-GaSb superlattices were grown by MOCVD. The quality is determined by x-ray double crystal rocking curves. The period thickness is determined by High Resolution Transmission Electron Microscopy (HRTEM). The absorption spectra were obtained by Fourier Transform Infrared Spectroscopy (FTIR). Linear combination of atomic orbitals (LCAO) method and transform matrix were used to calculate the band structure and transition energy of InAs-GaSb superlattices.

show abstract

“…The conduction-band (CB) minimum of InAs is lower in energy than the valence-band (VB) maximum of GaSb. It was observed that, in the study of (InAs) 1 . x (GaAs) x -(GaSb) 1 .…”

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition

Lin

Chen

et al. 1995

Journal of the Chinese Institute of Engineers

View full text Add to dashboard Cite

show abstract

“…The InAs-GaSb SL is composed of thin alternating InAs and GaSb layers that utilize quantum confinement to vary its bandgap by varying the SL periodicity, while the strained InAs-GaInSb SL employs quantum confinement and strain effects to vary its bandgap and optical characteristics. Intensive research over the past two decades has led to significant progress (3)(4)(5)(6)(7)(8) in understanding the characteristics of type II SL photodiodes. However, type II SL photodetectors have not realized their predicted performance (2, 9) expectations, which are based on the intrinsic characteristics of type II GaSb/InAs SLs.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes

Folkes¹,

Little²,

Svensson³

et al. 2008

View full text Add to dashboard Cite

Sensors and Electron Devices Directorate, ARLApproved for public release; distribution is unlimited.ii REPORT DOCUMENTATION PAGE Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)September 2008 PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) U.S. Army Research Laboratory Sensors and Electron Devices Directorate IR Materials Branch (ATTN: AMSRD-ARL-SE-EI) Adelphi, MD 20783-1197 PERFORMING ORGANIZATION REPORT NUMBER ARL-TR-4545 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTES ABSTRACTWe report the results of a study of the temperature-dependent photoluminescence (PL) and leakage current characteristics of a set of type II indium arsenide (InAs)-gallium antimonide (GaSb) superlattice (SL) photodiode structures. We find that the PL efficiency of high-quality structures is determined by Shockley-Read and trap-assisted tunneling nonradiative recombination processes. Our results suggest a possible correlation between trap-assisted tunneling in some SL structures and an anomalous decrease in the PL efficiency with increasing temperature over the range 40-78 K, and provide insight into the effect of defects and SL homogeneity on the PL and transport characteristics of the photodiodes.

show abstract

Photoelectric emission from quantum well wire: effect of broadening

Mutsuddi

Bose

Sarkar³

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

We investigate the photoemission from quasi-one-dimensional electron gas (Q1DEG) formed in a quantum wire in the presence of energy level broadening arising due to electron impurity interactions in a real system. The effect of broadening has been incorporated in analogy of energy level broadening observed in a bulk semiconductor subjected to a quantizing magnetic field. Inclusion of broadening is found to be responsible for the lowering of photoemission, as expected, due to enhanced scattering.

show abstract

Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlattices

Cited by 24 publications

References 6 publications

Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition

Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition

Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes

Photoelectric emission from quantum well wire: effect of broadening

Contact Info

Product

Resources

About