Operation of α(6H)-SiC pressure sensor at 500 °C

Okojie, Robert S.; Ned, A.A.; Kurtz, A. D.

doi:10.1016/s0924-4247(98)00009-0

Cited by 101 publications

(48 citation statements)

References 3 publications

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“…Even in a benign environment, the use of Si-based sensors is limited to operating temperatures around 500°C because of plastic deformation due to applied stress above these temperatures. 2 In addition to silicon, hightemperature microfabricated pressure sensors have also been developed from silicon carbide, [3][4][5][6][7] diamond, 8,9 and sapphire, 10,11 among others. These sensors, however, are generally either piezoresistive or capacitive, making them highly temperature dependent and/or contingent upon close proximity electronics which limit their high-temperature capabilities.…”

Section: Introductionmentioning

confidence: 99%

Development of a sapphire optical pressure sensor for high-temperature applications

et al. 2014

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This paper presents the fabrication, packaging, and characterization of a sapphire optical pressure sensor for hightemperature applications. Currently available instrumentation poses significant limitations on the ability to achieve realtime, continuous measurements in high-temperature environments such as those encountered in industrial gas turbines and high-speed aircraft. The fiber-optic lever design utilizes the deflection of a circular platinum-coated sapphire diaphragm to modulate the light reflected back to a single send/receive sapphire optical fiber. The 7 mm diameter, 50 μm thick diaphragm is attached using a novel thermocompression bonding process based on spark plasma sintering technology. Bonds using platinum as an intermediate layer are achieved at a temperature of 1200°C with a hold time of 5 min. Initial characterization of the bond interface using a simple tensile test indicates a bond strength in excess of 12 MPa. Analysis of the buckled diaphragm after bonding is also presented. The packaged sensor enables continuous operation up to 900°C. Room-temperature characterization reveals a first resonance of 18.2 kHz, a flat-band sensitivity of -130 dB re 1 V/Pa (0.32 μV/Pa) from 4-20 kHz, a minimum detectable pressure of 3.8 Pa, and a linear response up to 169 dB at 1.9 kHz.

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Section: Introductionmentioning

confidence: 99%

Development of a sapphire optical pressure sensor for high-temperature applications

et al. 2014

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“…Finally, one can fabricate single-crystal SiC MEMS by using SiC wafer as a starting material and applying selective electrochemical etching. 6,7 However, multiple ion implantations of n-type and subsequent ion implantation of p-type are necessary to form a sacrificial layer and a device layer, respectively. Also, the method requires high temperature (1700 C) annealing to activate the implanted dopants and no oxide isolation layer can be formed through this process.…”

Section: Introductionmentioning

confidence: 99%

Smart-cut layer transfer of single-crystal SiC using spin-on-glass

Lee

Bargatin

Park

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors demonstrate "smart-cut"-type layer transfer of single-crystal silicon carbide (SiC) by using spinon-glass (SoG) as an adhesion layer. Using SoG as an adhesion layer is desirable because it can planarize the surface, facilitate an initial low temperature bond, and withstand the thermal stresses at high temperature where layer splitting occurs (800-900 °C). With SoG, the bonding of wafers with a relatively large surface roughness of 7.5-12.5 Å rms can be achieved. This compares favorably to direct (fusion) wafer bonding, which usually requires extremely low roughness (<2 >Å rms), typically achieved using chemical mechanical polishing (CMP) after implantation. The higher roughness tolerance of the SoG layer transfer removes the need for the CMP step, making the process more reliable and affordable for expensive materials like SiC. To demonstrate the reliability of the smart-cut layer transfer using SoG, we successfully fabricated a number of suspended MEMS structures using this technology. Smart-cut layer transfer of single-crystal SiC using spin-on-glass The authors demonstrate "smart-cut"-type layer transfer of single-crystal silicon carbide (SiC) by using spin-on-glass (SoG) as an adhesion layer. Using SoG as an adhesion layer is desirable because it can planarize the surface, facilitate an initial low temperature bond, and withstand the thermal stresses at high temperature where layer splitting occurs (800-900 C). With SoG, the bonding of wafers with a relatively large surface roughness of 7.5-12.5 Å rms can be achieved. This compares favorably to direct (fusion) wafer bonding, which usually requires extremely low roughness (<2 Å rms), typically achieved using chemical mechanical polishing (CMP) after implantation. The higher roughness tolerance of the SoG layer transfer removes the need for the CMP step, making the process more reliable and affordable for expensive materials like SiC. To demonstrate the reliability of the smart-cut layer transfer using SoG, we successfully fabricated a number of suspended MEMS structures using this technology. Disciplines Mechanical Engineering

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“…1-10 Different approaches have been used to sense pressure at higher temperatures. One of these approaches is represented by piezoresistive SiC pressure sensors, which can be used to monitor the pressure of the internal combustion engine with temperatures greater than 300 C. 11,12 Unfortunately, the accuracy of the piezoresistive sensor decreases when the temperature is higher than 100 C due to its drop of resistivity. 13 High fabrication costs and up to 300 C temperature required in harsh environment requirement, creates great demand for new sensor solutions with higher reliability compared to the aforementioned ones.…”

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confidence: 99%